|
|
|
부품번호 | DG858BW45 기능 |
|
|
기능 | Gate Turn-off Thyristor | ||
제조업체 | Dynex | ||
로고 | |||
Replaces July 1999 version, DS4096-3.0
FEATURES
q Double Side Cooling
q High Reliability In Service
q High Voltage Capability
q Fault Protection Without Fuses
q High Surge Current Capability
q Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
APPLICATIONS
q Variable speed A.C. motor drive inverters (VSD-AC)
q Uninterruptable Power Supplies
q High Voltage Converters
q Choppers
q Welding
q Induction Heating
q DC/DC Converters
VOLTAGE RATINGS
Type Number
DG858BW45
Repetitive Peak
Off-state Voltage
VDRM
V
4500
DG858BW45
DG858BW45
Gate Turn-off Thyristor
DS4096-4.0 January 2000
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
3000A
4500V
1180A
1000V/µs
300A/µs
Package outline type code: W.
See Package Details for further information.
Figure 1. Package outline
Repetitive Peak Reverse
Voltage
VRRM
V
16
Conditions
Tvj = 125oC, IDM = 100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
I
T(AV)
IT(RMS)
Repetitive peak controllable on-state current VD = 66% VDRM, Tj = 125oC, diGQ/dt = 40A/µs, Cs = 3µF 3000
Mean on-state current
THS = 80oC. Double side cooled, half sine 50Hz 1180
RMS on-state current
THS = 80oC. Double side cooled, half sine 50Hz 1850
Units
A
A
A
1/19
DG858BW45
CURVES
2.5
12.5
2.0 10.0
1.5 7.5
1.0 5.0
VGT
0.5 2.5
IGT
00
-50 -25 0 25 50 75 100 125 150
Junction temperature Tj - (˚C)
Figure 2. Maximum gate trigger voltage/current vs junction temperature
4000
3000
Measured under pulse
conditions.
IG(ON) = 10A
Half sine wave 10ms
Tj = 25˚C
2000
Tj = 125˚C
1000
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous on-state voltage VTM - (V)
Figure 3. On-state characteristics
4/19
4페이지 DG858BW45
4500
4000
3500
3000
Conditions:
Tj = 25˚C
IFGM = 40A
Cs = 3µF
Rs = 10 Ohms
dIT/dt = 300A/µs
dIFG/dt = 40A/µs
2500
2000
VD = 3000V
VD = 2000V
1500
1000
VD = 1000V
500
0
0
500
1000
1500
2000
2500
On-state current IT - (A)
Figure 9. Turn-on energy vs on-state current
8000
7000
6000
Conditions:
IT = 3000A, Tj = 25˚C,
Cs = 3.0µF, Rs = 10 Ohms
dIT/dt = 300A/µs,
dIFG/dt = 40A/µs
5000
3000
4000
3000
2000
1000
VD = 3000V
VD = 2000V
VD = 1000V
0
0 10 20 30 40 50 60 70 80
Peak forward gate current IFGM- (A)
Figure 10. Turn-on energy vs peak forward gate current
7/19
7페이지 | |||
구 성 | 총 19 페이지수 | ||
다운로드 | [ DG858BW45.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DG858BW45 | Gate Turn-off Thyristor | Dynex |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |