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PDF DG858DW45 Data sheet ( Hoja de datos )
| Número de pieza | DG858DW45 | |
| Descripción | Gate Turn-Off Thyristor | |
| Fabricantes | Dynex | |
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Replaces July 1999 version, DS4334-4.0
DG858DW45
DG858DW45
Gate Turn-Off Thyristor
DS4334-4.1 May 2000
FEATURES
q Double Side Cooling
q High Reliability In Service
q High Voltage Capability
q Fault Protection Without Fuses
q High Surge Current Capability
q Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces
Acoustic Cladding Necessary For Environmental
Requirements
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
dIT/dt
3000A
4500V
1100A
750V/µs
300A/µs
APPLICATIONS
q Variable speed A.C. motor drive inverters (VSD-AC).
q Uninterruptable Power Supplies
q High Voltage Converters.
q Choppers.
q Welding.
q Induction Heating.
q DC/DC Converters.
VOLTAGE RATINGS
Type Number
DG858DW45
Repetitive Peak Off-state
Voltage
VDRM
V
4500
Package outline type code : W
See Package Details for further information.
Fig.1 Package outline
Repetitive Peak Reverse
Voltage
VRRM
V
16
Conditions
Tvj = 125oC, IDRM =100mA,
IRRM = 50mA
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
Repetitive peak controllable on-state current VD = VDRM, Tj = 125oC, diGQ/dt = 40A/µs,
Cs = 4.0µF, LS ≤ 200nH
3000
IT(AV) Mean on-state current
T = 80oC. Double side cooled, half sine 50Hz. 1100
HS
I RMS on-state current
T(RMS)
T = 80oC. Double side cooled, half sine 50Hz. 1720
HS
Units
A
A
A
1/7
1 page  
DG858DW45
0.9VD
VD
0.9IT
dVD/dt
IT
VD VDM
0.1VD
td tr
dIFG/dt
tgt
IFG
0.1IFG
VFG
tw1
VDP
tgs
ITAIL
tgf
tgq
IG(ON)
0.1IGQ
QGQ
0.5IGQM
IGQM
V(RG)BR
VRG
Recommended gate conditions:
ITCM = 3000A
IFG = 40A
IG(ON) = 10A d.c.
tw1(min) = 20µs
IGQM = 1200A
diGQ/dt = 40A/µs
QGQ = 12500µC
VRG(min) = 2V
VRG(max) = 18V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Figure 3. General switching waveforms
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DG858DW45.PDF ] | |
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