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Número de pieza | DGT304SE13 | |
Descripción | Gate Turn-off Thyristor | |
Fabricantes | Dynex | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DGT304SE13 (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
No Preview Available ! DGT304SE13
DGT304SE
Gate Turn-off Thyristor
Replaces January 2000 version, DS4609-4.0
DS4609-4.1 February 2002
APPLICATIONS
s Variable speed A.C. motor drive inverters (VSD-AC)
s Uninterruptable Power Supplies
s High Voltage Converters
s Choppers
s Welding
s Induction Heating
s DC/DC Converters
KEY PARAMETERS
ITCM
VDRM
IT(AV)
dVD/dt
diT/dt
700A
1300V
250A
500V/µs
500A/µs
FEATURES
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s High Surge Current Capability
s Turn-off Capability Allows Reduction In Equipment
Size And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
VOLTAGE RATINGS
Outline type code: E.
See Package Details for further information.
Type Number
DGT304SE13
Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage
VDRM
V
VRRM
V
1300
16
Conditions
Tvj = 125oC, IDM = 50mA,
IRRM = 50mA, VRG = 2V
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
ITCM
IT(AV)
I
T(RMS)
Repetitive peak controllable on-state current VD = 60%VDRM, Tj = 125oC, diGQ/dt =15A/µs, Cs = 2.0µF
Mean on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
RMS on-state current
THS = 80oC. Double side cooled. Half sine 50Hz.
700
250
390
Units
A
A
A
1/13
1 page DGT304SE13
Fig.6 Steady state rectangulerwave conduction loss - double side cooled
Fig.7 Steady state sinusoidal wave conduction loss - double side cooled
5/13
5 Page DGT304SE13
Fig.28 Dependence of critical dVD/dt on gate-cathode
resistance and gate-cathode reverse voltage
0.9VD
VD
0.1VD
td tr
dIFG/dt
tgt
IFG
0.1IFG
VFG
tw1
0.9IT
dVD/dt
IT
VDP
tgs
ITAIL
tgf
tgq
Recommended gate conditions:-
VD VDM
ITCM = 700A
IFG = 20A
dIFG/dt = 20A/µs
IG(ON) = 2A d.c.
tw1(min) = 4.5µs
IGQM = 120A
dIGQ/dt = 15A/µs
QGQ = 700µc
VRG(min) = 2V
VRG(max) = 16V
These are recommended Dynex Semiconductor
conditions. Other conditions are permitted
according to users gate drive specifications.
IG(ON)
0.1IGQ
QGQ
0.5IGQM
IGQM
VRG
V(RG)BR
Fig.29 General switching waveforms
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet DGT304SE13.PDF ] |
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