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DGT409BCA PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 DGT409BCA
기능 Reverse Blocking Gate Turn-off Thyristor
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DGT409BCA 데이터시트, 핀배열, 회로
Replaces January 2000 version, DS4414-4.0
DGT409BCA
DGT409BCA
Reverse Blocking Gate Turn-off Thyristor
DS4414-4.1 February 2002
APPLICATIONS
The DGT409 BCA is a symmetrical GTO designed for
applications which specifically require a reverse blocking
capability, such as current source inverters (CSI). Reverse
recovery ratings and characteristics are included.
FEATURES
s Reverse Blocking Capability
s Double Side Cooling
s High Reliability In Service
s High Voltage Capability
s Fault Protection Without Fuses
s Turn-off Capability Allows Reduction In Equipment Size
And Weight. Low Noise Emission Reduces Acoustic
Cladding Necessary For Environmental Requirements
ORDERING INFORMATION
Order as: DGT409BCA6565
KEY PARAMETERS
ITCM
1500A
VDRM/VDRM
6500V
dVD/dt
1000V/µs
diT/dt
300A/µs
Outline type code: CA
See Package Details for further information
Fig. 1 Package outline
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DGT409BCA pdf, 반도체, 판매, 대치품
DGT409BCA
0.9x VD
0.9x IT
dVD/dt
0.1x VD
td tr
tgt
dIFG/dt
0.1x IFG
IFG
VFG
tgs
tgf
tgq
ITAIL
IG(ON)
tw1 0.1x IGQ
QGQ
0.5x IGQM
IGQM
V(RG)BR
Recommended gate conditions to switch off ITCM = 800A:
IFG = 30A
IG(ON) = 4A d.c.
tw1(min) = 20µs
IGQM = 270A typical
diGQ/dt = 30A/µs
QGQ = 2200µC
VRG(min) = 2V
VRG(max) = 15V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Fig.2 General switching waveforms
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DGT409BCA 전자부품, 판매, 대치품
DGT409BCA
2500
Conditions:
2300
Tc = 100˚C,
VR = 3500V
2100
1900
IT = 300A
1700
1500
IT = 150A
1300
1100
900
700
500
0 20 40 60 80 100 120 140 160 180 200
Rate of fall of anode current, dI/dt - (A/µs)
Fig.9 Maximum reverse recovery power vs rate of fall of
anode current
6000
Conditions:
5500 Tj = 115˚C, IFG = 20A,
CS = 2µF, RS = 20,
5000 dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
4500
4000
VD = 4500V
VD = 3000V
3500
3000
2500
VD = 1500V
2000
1500
1000
500
0
0 100 200 300 400 500 600 700 800
On-state current, IT - (A)
Fig.10 Turn-on energy vs on-state current
4000
3500 VD = 4500V
3000
2500 VD = 3000V
2000
1500
VD = 1500V
1000 Conditions:
Tj = 115˚C, IT = 400A,
500 CS = 2µF, RS = 20,
dIT/dt = 150A/µs,
dIFG/dt = 30A/µs
0
0 10 20 30 40 50
Peak forward gate current, IFGM - (A)
60
Fig.11 Turn-on energy vs peak forward gate current
8
7 tr
6
5
4
3 td
2 Conditions:
Tj = 115˚C, IFG = 20A,
1 CS = 2µF, RS = 10,
VD = 3000V, dIT/dt = 150A/s
dIFG/dt = 30A/µs
0
0 100 200 300 400 500 600 700
On-state current, IT - (A)
Fig.12 Delay time and rise time vs on-state current
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휴대전화 : 010-3582-2743


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부품번호상세설명 및 기능제조사
DGT409BCA

Reverse Blocking Gate Turn-off Thyristor

Dynex
Dynex
DGT409BCA6565

Reverse Blocking Gate Turn-off Thyristor

Dynex
Dynex

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