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DIM200PHM33-A000 데이터시트 PDF




Dynex에서 제조한 전자 부품 DIM200PHM33-A000은 전자 산업 및 응용 분야에서
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부품번호 DIM200PHM33-A000 기능
기능 Half Bridge IGBT Module Preliminary Information
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DIM200PHM33-A000 데이터시트, 핀배열, 회로
www.DataSheet4U.com
DIM200PHM33-A000
Replaces November 2002, version DS5464-6.2
FEATURES
I 10µs Short Circuit Withstand
I High Thermal Cycling Capability
I Non Punch Through Silicon
I Isolated MMC Base with AlN Substrates
DIM200PHM33-A000
Half Bridge IGBT Module
DS5464-7.1 January 2003
KEY PARAMETERS
VCES
3300V
VCE(sat) *
(typ)
3.4V
IC
(max)
200A
IC(PK)
(max)
400A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
I High Reliability Inverters
I Motor Controllers
I Traction Auxiliaries
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 2400A.
The DIM200PHM33-A000 is a half bridge 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand. This device is
optimised for traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM200PHM33-A000
Note: When ordering, please use the whole part number.
1(E1/C2)
2(C1)
5(E1)
4(G1)
8(C1)
3(E2)
7(E2)
6(G2)
Fig. 1 Half bridge circuit diagram
Outline type code: P
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10




DIM200PHM33-A000 pdf, 반도체, 판매, 대치품
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DIM200PHM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25˚C unless stated otherwise.
Symbol
Parameter
Test Conditions
ICES
I
GES
VGE(TH)
V
CE(sat)
I
F
IFM
VF†
C
ies
Cres
LM
R
INT
SCData
Collector cut-off current
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
Diode forward current
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
IC =20mA, VGE = VCE
V = 15V, I = 200A
GE C
VGE = 15V, IC = 200A, , Tcase = 125˚C
DC
Diode maximum forward current
Diode forward voltage
Input capacitance
Reverse transfer capacitance
Module inductance - per switch
tp = 1ms
I = 200A
F
IF = 200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
VCE = 25V, VGE = 0V, f = 1MHz
-
Internal transistor resistance - per switch
-
Short circuit. ISC
Tj = 125˚C, VCC = 2500V,
I1
t
p
10µs,
V
CE(max)
=
V
CES
L*.
di/dt
I
2
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals)
L* is the circuit inductance + LM
Min. Typ. Max. Units
- - 1 mA
- - 15 mA
- - 2 µA
4.5 5.5 6.5 V
- 3.4 - V
- 4.4 - V
- 200 -
A
- 400 -
A
- 2.5 - V
- 2.5 - V
- 45 - nF
- 0.65 - nF
- 30 - nH
- 0.54 - m
- 1300 -
A
- 1100 -
A
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000 전자부품, 판매, 대치품
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DIM200PHM33-A000
400
Tj = 25˚C
Tj = 125˚C
350 VF is measured at power busbars
and not the auxiliary terminals
300
250
200
150
100
50
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
4.0
400
Tj = 125˚C
350
300
250
200
150
100
50
0
0 500 1000 1500 2000 2500 3000 3500
Reverse voltage, VR - (V)
Fig. 9 Diode reverse bias safe operating area
500
400
Chip
300
Module
200
100
Tcase = 125˚C
Vge = ±15V
Rg(min) = 10
0
0 500 1000
1500
2000
2500
3000
Collector emitter voltage, Vce - (V)
3500
Fig. 8 Reverse bias safe operating area
100
Diode
Transistor
10
1
0.1
0.001
1 23
IGBT Ri (˚C/KW) 1.79 11.26 15.77
τi (ms)
0.13 5.80 48.03
Diode Ri (˚C/KW) 3.58 22.52 31.53
τi (ms)
0.13 5.80 48.03
0.01 0.1
Pulse width, tp - (s)
1
Fig. 10 Transient thermal impedance
4
19.11
248.53
38.23
248.53
10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10

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