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DIM400LSS17-A000 데이터시트 PDF




Dynex에서 제조한 전자 부품 DIM400LSS17-A000은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 DIM400LSS17-A000 기능
기능 Single Switch IGBT Module
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DIM400LSS17-A000 데이터시트, 핀배열, 회로
DIM400LSS17-A000
DIM400LSS17-A000
Single Switch IGBT Module
Replaces issue February 2002, version DS5497-2.0
DS5497-3.0 March 2002
FEATURES
s 10µs Short Circuit Withstand
s Non Punch Through Silicon
s Isolated Copper Base
KEY PARAMETERS
VCES
1700V
VCE(sat) *
(typ)
2.7V
IC
(max)
400A
IC(PK)
(max)
800A
*(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
s Inverters
s Motor Controllers
s Induction Heating
The Powerline range of modules includes half bridge,
chopper, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM400LSS17-A000 is a single switch 1700V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) plus full 10µs short circuit withstand.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
2(E)
5(E1)
3(G1)
1(C)
4(C1)
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
DIM400LSS17-A000
Note: When ordering, please use the whole part number.
4
52
3
1
Outline type code: L
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10




DIM400LSS17-A000 pdf, 반도체, 판매, 대치품
DIM400LSS17-A000
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise.
case
Symbol
Parameter
Test Conditions
ICES Collector cut-off current
VGE = 0V, VCE = VCES
V = 0V, V = V , T = 125˚C
GE CE CES case
IGES Gate leakage current
VGE = ±20V, VCE = 0V
V
GE(TH)
Gate threshold voltage
IC = 20mA, VGE = VCE
V
CE(sat)
Collector-emitter saturation voltage
VGE = 15V, IC = 400A
V = 15V, I = 400A, , T = 125˚C
GE C
case
IF Diode forward current
DC
I Diode maximum forward current
FM
tp = 1ms
VF† Diode forward voltage
IF = 400A
I = 400A, T = 125˚C
F case
Cies Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
LM Module inductance
-
RINT Internal transistor resistance
-
SCData
Short circuit. ISC
Tj = 125˚C, VCC = 1000V,
I1
tp 10µs, VCE(max) = VCES – L*. di/dt I2
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals)
* L is the circuit inductance + LM
Min. Typ. Max. Units
- - 1 mA
- - 12 mA
- - 2 µA
4.5 5.5 6.5 V
-
2.7 3.2
V
-
3.4 4.0
V
- - 400 A
- - 800 A
-
2.2 2.5
V
-
2.3 2.6
V
- 30 - nF
- 15 - nH
- 0.27 - m
- 1850 -
A
- 1600 -
A
4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com

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DIM400LSS17-A000 전자부품, 판매, 대치품
DIM400LSS17-A000
800
VF is measured at power busbars
and not the auxiliary terminals
700
600
Tj = 25˚C
500
Tj = 125˚C
400
300
200
100
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig. 7 Diode typical forward characteristics
400
350
300
250
200
150
100
50
Tj = 125˚C
0
0 400
800 1200 1600
Reverse voltage, VR - (V)
2000
Fig. 9 Diode reverse bias safe operating area
900
800
Chip
700
Module
600
500
400
300
200
Conditions:
100 Tcase = 125˚C,
Vge = 15V,
Rg(off) = 4.7ohms
0
0 200 400 600
800 1000 1200 1400 1600 1800
Collector emitter voltage, Vce - (V)
Fig. 8 Reverse bias safe operating area
1000
100
IC(max) DC
10
tp = 50µs
tp = 100µs
tp = 1 ms
1
Tvj = 125˚C, Tcase = 68˚C
0.1
1 10 100 1000
Collector-emitter voltage, Vce - (V)
Fig. 10 Forward bias safe operating area
1000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
7/10

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부품번호상세설명 및 기능제조사
DIM400LSS17-A000

Single Switch IGBT Module

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