|
|
|
부품번호 | SPI07N60C3 기능 |
|
|
기능 | Cool MOS Power Transistor | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 15 페이지수
SPP07N60C3
SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
VDS @ Tjmax
RDS(on)
ID
650
0.6
7.3
V
Ω
A
• Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
• Extreme dv/dt rated
2
• High peak current capability
• Improved transconductance
P-TO220-3-31
3
12
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-1
123
Type
SPP07N60C3
SPI07N60C3
SPA07N60C3
Package
PG-TO220-3
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4400
Q67040-S4424
SP000216303
Marking
07N60C3
07N60C3
07N60C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 6)
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
7.3
4.6
21.9
230
7.31)
4.61)
21.9
230
0.5 0.5
7.3 7.3
±20 ±20
±30 ±30
83 32
-55...+150
15
Unit
A
A
mJ
A
V
W
°C
V/ns
Rev. 3.2
Page 1
2009-11-27
SPP07N60C3
SPI07N60C3, SPA07N60C3
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS TC=25°C
ISM
VSD
trr
Qrr
Irrm
dirr/dt
VGS=0V, IF=IS
VR=480V, IF=IS ,
diF/dt=100A/µs
Tj=25°C
Values
Unit
min. typ. max.
- - 7.3 A
- - 21.9
- 1 1.2 V
- 400 600 ns
- 4 - µC
- 28 - A
- 800 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP_I
SPA
Rth1
Rth2
Rth3
Rth4
Rth5
Rth6
0.024
0.046
0.085
0.308
0.317
0.112
0.024
0.046
0.085
0.195
0.45
2.511
K/W
Cth1
Cth2
Cth3
Cth4
Cth5
Cth6
Value
SPP_I
SPA
0.00012
0.00012
0.0004578 0.0004578
0.000645 0.000645
0.001867 0.001867
0.004795 0.007558
0.045
0.412
Unit
Ws/K
Ptot (t)
Tj R th1
C th 1
C th 2
Rth,n Tcase External Heatsink
C th ,n
Tamb
Rev. 3.2
Page 4
2009-11-27
4페이지 SPP07N60C3
SPI07N60C3, SPA07N60C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
Ω 4V
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
3.4 SPP07N60C3
Ω
8 4.5V
2.8
7
5V
6
5
6V
6.5V
4
5.5V
8V
20V
3
2
1
2.4
2
1.6
1.2
0.8
0.4
98%
typ
00 2 4 6 8 10 12 A 15
ID
0-60 -20 20
60 100 °C
180
Tj
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
24
A
20 25°C
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 7.3 A pulsed
16 SPP07N60C3
V
18 12
16
10
0,2 VDS max
0,8 VDS max
14
150°C
12 8
10
6
8
64
4
2
2
00 2 4 6 8 10 12 14 16 V 20
VGS
00 4 8 12 16 20 24 28 nC 34
QGate
Rev. 3.2
Page 7
2009-11-27
7페이지 | |||
구 성 | 총 15 페이지수 | ||
다운로드 | [ SPI07N60C3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SPI07N60C3 | Cool MOS Power Transistor | Infineon Technologies |
SPI07N60C3 | Cool MOS Power Transistor | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |