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부품번호 | IRFP9140N 기능 |
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기능 | Power MOSFET ( Transistor ) | ||
제조업체 | IRF | ||
로고 | |||
전체 8 페이지수
PRELIMINARY
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l P-Channel
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 9.1492A
IRFP9140N
HEXFET® Power MOSFET
D
VDSS = -100V
RDS(on) = 0.117Ω
ID = -23A
S
TO-247AC
Max.
-23
-16
-76
140
0.91
± 20
430
-11
14
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.24
–––
Max.
1.1
–––
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
3/16/98
IRFP9140N
3000
2500
2000
1500
1000
500
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds S H O R TE D
C rss = C gd
C oss = Cds + C gd
C is s
Coss
Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I D = -11A
16
12
VDS = -80V
VDS = -50V
VDS = -20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 20 40 60 80 100
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100 1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10
TJ = 175°C
1
TJ = 25°C
0.1
0.2
VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VSD , S ourc e-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
100
100µs
10
1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10ms
1 10 100
-VD S , D rain-to-S ource V oltage (V )
A
1000
Fig 8. Maximum Safe Operating Area
4페이지 IRFP9140N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
RG
VGS
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
[VDD]
Ripple ≤ 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
7페이지 | |||
구 성 | 총 8 페이지수 | ||
다운로드 | [ IRFP9140N.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRFP9140 | P-Channel Power MOSFET | INTERSIL |
IRFP9140 | (IRF9140 - IRF9143) P-Channel Power MOSFETs | Samsung Electronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |