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PDF IRFP9240 Data sheet ( Hoja de datos )
| Número de pieza | IRFP9240 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | INTERSIL | |
| Logotipo |  |
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Data Sheet
IRFP9240
July 1999 File Number 2294.3
12A, 200V, 0.500 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17522.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9240
TO-247
IRFP9240
NOTE: When ordering, use the entire part number.
Features
• 12A, 200V
• rDS(ON) = 0.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
4-71
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
1 page  
IRFP9240
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1800
CISS
1200
600
0
-1
COSS
CRSS
-2
-5 -10
-2
-5
VDS, DRAIN TO SOURCE VOLTAGE (V)
-102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≤ -50V
8
6
4
TJ = 25oC
TJ = 150oC
2
0
0 -4 -8 -12 -16 -20
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
TJ = 25oC
-1.0
-0.1
-0.4
-0.6 -0.8 -1.0 -1.2 -1.4 -1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
-1.8
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = -12A
16
12
VDS = -160V
VDS = -100V
VDS = -40V
8
4
0 0 12 24 36 48 60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-75
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IRFP9240.PDF ] | |
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