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PDF MJH16018 Data sheet ( Hoja de datos )

Número de pieza MJH16018
Descripción NPN Silicon High Voltage Power Transistor
Fabricantes Semiconductor Technology 
Logotipo Semiconductor Technology Logotipo



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PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
TYPE: MJH16018
PH: (561)283-4500 FAX: (561)286-8914
Website: http://www.semi -tech-inc.com
CASE OUTLINE: TO -218
NPN SILICON HIGH VOLTAGE POWER TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base Voltage
BVCBO
1500
Vdc
Collector to Emitter Voltage
BVCEV
800 Vdc
Emitter to Base
BVEBO
6.0 Vdc
Collector to Emitter
BVCEO(sus)
Vdc
Continuous Collector Current
IC 10 Adc
Peak Collector Current
ICM 15 Adc
Power Dissipation TA = 25 °C
PD Watts
Power Dissipation TC = 25 °C
PD 150 Watts
Storage Temperature
Tstg
-55 to +150
°C
Operating Temperature
TJ
-55 to +150
°C
Lead Temperature From Case
TL 275 °C
ELECTRICAL CHARACTERISTICS TA @ 25 ° C
PARAMETERS
SYMBOL
TEST CONDITIONS
Collector to Base Voltage
BVCBO
Emitter to Base Voltage
BVEBO
Collector to Emitter Voltage BVCEO(sus) IC = 100mA
Collector to Emitter Voltage
BVCEO
Collector to Emitter Voltage
BVCEV
Collector Cutoff Current
ICER
VCE = 1500V RBE = 50TC = 100°C
Collector Cutoff Current
ICBO
Collector Cutoff Current
ICES
Collector Cutoff Current
ICEX
VCE = 1500V VBE(OFF) = 1.5V
Collector Cutoff Current
ICEX
VCE = 1500V VBE(OFF) = 1.5VTC=100°C
Emitter Cutoff Current
IEBO
VEB = 6V
D.C. Current Gain Pulsed*
hFE IC = 5A VCE = 5V
D.C. Current Gain Pulsed*
hFE
D.C. Current Gain Pulsed*
hFE
D.C. Current Gain Pulsed*
hFE
D.C. Current Gain Pulsed*
hFE
Saturation Voltage*
VCE(sat) IC = 5.0A IB = 1.0A
Saturation Voltage*
VCE(sat) IC = 10A IB = 4.0A
Saturation Voltage*
VCE(sat) IC = 5.0A IB = 1.0A TC=100°C
Base Emitter Voltage*
VBE(sat)
Base Emitter Voltage*
VBE(sat) IC = 5.0A IB = 1.0A
Base Emitter Voltage*
VBE(sat) IC = 5.0A IB = 1.0A TC=100°C
Base Emitter Voltage*
VBE(on)
Notes: *Pulse Width 300usec 2% Duty Cycle
MIN
800
7.0
TYP
MAX
2.5
250
1.5
100
1.5
1.5
2.0
1.5
1.5
UNIT
Vdc
Vdc
Vdc
Vdc
Vdc
mA
mA
mA
µA
mA
µA
-
-
-
-
-
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
September 10, 2001
PT-1
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