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PDF MRA100035L Data sheet ( Hoja de datos )
| Número de pieza | MRA100035L | |
| Descripción | UHF POWER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Power Transistor
Designed primarily for wideband, large–signal output and driver amplifier
stages to 1000 MHz.
• Designed for Class A Linear Power Amplifiers
• Specified 19 Volt, 1000 MHz Characteristics:
Output Power — 3.5 Watts
Power Gain — 10 dB, Small–Signal
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
Order this document
by MRA1000–3.5L/D
MRA1000-3.5L
10 dB, 1000 MHz
3.5 W
BROADBAND
UHF POWER TRANSISTOR
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating Junction Temperature
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (TC = 70°C)
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0)
Collector–Base Breakdown Voltage (IC = 10 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
Collector Cutoff Current (VCB = 30 V, IE = 0)
.
CASE 145D–02, STYLE 1
(.380 SOE)
Symbol
VCEO
VCBO
VEBO
PD
TJ
Tstg
Symbol
RθJC
Value
28
50
3.5
22
0.125
200
– 65 to +200
Max
8
Unit
Vdc
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
Symbol
Min
Typ
Max Unit
V(BR)CEO
28
–
– Vdc
V(BR)CES
50
–
– Vdc
V(BR)CBO
50
–
– Vdc
V(BR)EBO
3.5
–
– Vdc
ICBO
–
– 10 mAdc
(continued)
REV 1
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MRA1000–3.5L
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MRA100035L.PDF ] | |
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