|
|
|
부품번호 | STP6NA60FI 기능 |
|
|
기능 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ||
제조업체 | ST Microelectronics | ||
로고 | |||
전체 10 페이지수
STP6NA60
STP6NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST P 6NA 60
ST P 6NA 60 F I
VDSS
600 V
600 V
R DS( on)
< 1.2 Ω
< 1.2 Ω
ID
6.5 A
3.9 A
s TYPICAL RDS(on) = 1 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCES
s GATE GHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized cell layout coupled with a new
proprietary edge termination concur to give the
device low RDS(on) and gate charge, unequalled
ruggedness and superior switching performance.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
P ar amete r
VD S Drain-source Voltage (VGS = 0)
VDG R Drain-gate Voltage (RG S = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at T c = 25 oC
ID Drain Current (continuous) at T c = 100 oC
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
November 1996
3
2
1
TO-220
3
2
1
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
Val ue
STP6NA60
STP6NA60FI
600
600
± 30
6.5 3.9
4.3 2.6
26 26
125 45
1 0.36
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
V
oC
oC
1/10
STP6NA60/FI
Thermal Impedeance For TO-220
Thermal Impedance For ISOWATT220
Derating Curve For TO-220
Derating Curve For ISOWATT220
Output Characteristics
Transfer Characteristics
4/10
4페이지 STP6NA60/FI
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Reverse Recovery Time
7/10
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ STP6NA60FI.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
STP6NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ST Microelectronics |
STP6NA60FP | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |