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Número de pieza | DMV1500M | |
Descripción | DAMPER + MODULATION DIODE FOR VIDEO | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
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DAMPER + MODULATION DIODE FOR VIDEO
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
trr (max)
VF (max)
MODUL
3A
600 V
50 ns
1.4 V
DAMPER
6A
1500 V
135 ns
1.65 V
FEATURES AND BENEFITS
s Full kit in one package
s High breakdown voltage capability
s Very fast recovery diode
s Specified turn on switching characteristics
s Low static and peak forward voltage drop for low
dissipation
s Insulated version:
Insulated voltage = 2500 VRMS
Capacitance = 7 pF
s Planar technology allowing high quality and
best electrical characteristics
s Outstanding performance of well proven DTV
as damper and new faster Turbo 2 600V
technology as modulation
DAMPER
MODULATION
123
3
12
Insulated TO-220AB
(Bending option F5 available)
DESCRIPTION
High voltage semiconductor especially designed
for horizontal deflection stage in standard and high
resolution video display with E/W correction.
The insulated TO-220AB package includes both
the DAMPER diode and the MODULATION diode.
Assembled on automated line, it offers excellent
insulating and dissipating characteristics, thanks
to the internal ceramic insulation layer.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
Unit
MODUL DAMPER
600 1500 V
35 75 A
- 40 to + 150
°C
150
July 2001 - Ed: 6A
1/9
1 page Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
DMV1500M
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (damper diode).
K=[Zth(j-c)/Rth(j-c)]
1.0
δ = 0.5
0.5
δ = 0.2
δ = 0.1
0.2
Single pulse
0.1
1E-3
1E-2
tp(s)
T
δ=tp/T
1E-1
tp
1E+0
IM(A)
40
35
30
25
20
15
10
IM
5
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=100°C
1E+0
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (modulation diode).
Fig. 6-1: Reverse recovery charges versus dIF/dt
(damper diode).
IM(A)
30
25
20
15
10
5 IM
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=100°C
1E+0
Qrr(nc)
1000
900
800
IF= 6A
90% confidence
Tj=125°C
700
600
500
400
300
200
100
0
0.1 0.2
dIF/dt(A/µs)
0.5 1.0
2.0
5.0
Fig. 6-2: Reverse recovery charges versus dIF/dt
(modulation diode).
Fig. 7-1: Reverse recovery current versus dIF/dt
(damper diode).
Qrr(nC)
200
150
IF= 3A
90% confidence
Tj=125°C
100
50
0
0.1
dIF/dt(A/µs)
1.0 10.0
100.0
IRM(A)
2.0
1.8
1.6
IF= 6A
90% confidence
Tj=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
0.2
dIF/dt(A/µs)
0.5 1.0
2.0
5.0
® 5/9
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet DMV1500M.PDF ] |
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