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부품번호 | GE28F128W30BD70 기능 |
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기능 | (GE28Fxxx Series) Wireless Flash Memory | ||
제조업체 | Intel | ||
로고 | |||
전체 70 페이지수
Intel® Wireless Flash Memory (W30)
28F640W30, 28F320W30, 28F128W30
Datasheet
Product Features
■ High Performance Read-While-Write/Erase
— Burst Frequency at 40 MHz
— 70 ns Initial Access Speed
— 25 ns Page-Mode Read Speed
— 20 ns Burst-Mode Read Speed
— Burst and Page Mode in All Blocks and
across All Partition Boundaries
— Burst Suspend Feature
— Enhanced Factory Programming:
3.5 µs per Word Program Time
— Programmable WAIT Signal Polarity
■ Flash Power
— VCC = 1.70 V – 1.90 V
— VCCQ = 2.20 V – 3.30 V
— Standby Current (0.13 µm) = 8 µA (typ.)
— Read Current = 7 mA
(4 word burst, typ.)
■ Flash Software
— 5 µs/9 µs (typ.) Program/Erase Suspend
Latency Time
— Intel® Flash Data Integrator (FDI) and
Common Flash Interface (CFI) Compatible
■ Quality and Reliability
— Operating Temperature:
–40 °C to +85 °C
— 100K Minimum Erase Cycles
— 0.13 µm ETOX™ VIII Process
— 0.18 µm ETOX™ VII Process
■ Flash Architecture
— Multiple 4-Mbit Partitions
— Dual Operation: RWW or RWE
— Parameter Block Size = 4-Kword
— Main block size = 32-Kword
— Top and Bottom Parameter Devices
■ Flash Security
— 128-bit Protection Register: 64 Unique Device
Identifier Bits; 64 User OTP Protection
Register Bits
— Absolute Write Protection with VPP at Ground
— Program and Erase Lockout during Power
Transitions
— Individual and Instantaneous Block Locking/
Unlocking with Lock-Down
■ Density and Packaging
— 0.13 µm: 32-, 64-, and 128-Mbit in VF BGA
Package; 64-, 128-Mbit in QUAD+ Package
— 0.18 µm: 32- and 128-Mbit Densities in VF
BGA Package; 64-Mbit Density in µBGA*
Package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
— 16-bit Data Bus
The Intel®Wireless Flash Memory (W30) device combines state-of-the-art Intel® Flash
technology to provide the most versatile memory solution for high performance, low power,
board constraint memory applications. The W30 device offers a multi-partition, dual-operation
flash architecture that enables the device to read from one partition while programming or
erasing in another partition. This Read-While-Write or Read-While-Erase capability makes it
possible to achieve higher data throughput rates as compared to single partition devices,
allowing two processors to interleave code execution because program and erase operations can
now occur as background processes.
The W30 device incorporates a new Enhanced Factory Programming (EFP) mode to improve 12
V factory programming performance. This new feature helps eliminate manufacturing
bottlenecks associated with programming high density flash devices. Compare the EFP program
time of 3.5 µs per word to the standard factory program time of 8.0 µs per word and save
significant factory programming time for improved factory efficiency.
Additionally, the W30 device includes block lock-down and programmable WAIT signal
polarity, and is supported by an array of software tools. All these features make this product a
perfect solution for any demanding memory application.
Notice: This document contains information on new products in production. The specifications
are subject to change without notice. Verify with your local Intel sales office that you have the lat-
est datasheet before finalizing a design.
290702-010
May 2004
28F320W30, 28F640W30, 28F128W30
10.0
11.0
12.0
13.0
14.0
4
9.1.3 Standby .................................................................................................. 50
9.1.4 Reset ...................................................................................................... 50
9.1.5 Write ....................................................................................................... 50
9.2 Device Commands .............................................................................................. 51
9.3 Command Sequencing........................................................................................ 54
Read Operations....................................................................................................... 55
10.1 Read Array .......................................................................................................... 55
10.2 Read Device ID ................................................................................................... 55
10.3 Read Query (CFI)................................................................................................ 56
10.4 Read Status Register .......................................................................................... 56
10.5 Clear Status Register .......................................................................................... 58
Program Operations ............................................................................................... 58
11.1 Word Program ..................................................................................................... 58
11.2 Factory Programming.......................................................................................... 59
11.3 Enhanced Factory Program (EFP) ...................................................................... 60
11.3.1 EFP Requirements and Considerations ................................................. 60
11.3.2 Setup ...................................................................................................... 61
11.3.3 Program ................................................................................................. 61
11.3.4 Verify ...................................................................................................... 61
11.3.5 Exit ......................................................................................................... 62
Program and Erase Operations.......................................................................... 64
12.1
12.2
12.3
Program/Erase Suspend and Resume ............................................................... 64
Block Erase ......................................................................................................... 66
Read-While-Write and Read-While-Erase .......................................................... 68
Security Modes ......................................................................................................... 69
13.1
13.2
13.3
Block Lock Operations ........................................................................................ 69
13.1.1 Lock........................................................................................................ 70
13.1.2 Unlock .................................................................................................... 70
13.1.3 Lock-Down ............................................................................................. 70
13.1.4 Block Lock Status................................................................................... 71
13.1.5 Lock During Erase Suspend .................................................................. 71
13.1.6 Status Register Error Checking.............................................................. 71
13.1.7 WP# Lock-Down Control ........................................................................ 72
Protection Register.............................................................................................. 72
13.2.1 Reading the Protection Register ............................................................ 73
13.2.2 Programing the Protection Register ....................................................... 73
13.2.3 Locking the Protection Register ............................................................. 74
VPP Protection .................................................................................................... 75
Set Read Configuration Register....................................................................... 76
14.1 Read Mode (RCR[15]) ........................................................................................ 78
14.2 First Access Latency Count (RCR[13:11]) .......................................................... 78
14.2.1 Latency Count Settings .......................................................................... 79
14.3 WAIT Signal Polarity (RCR[10]) .......................................................................... 79
14.4 WAIT Signal Function ......................................................................................... 79
14.5 Data Hold (RCR[9]) ............................................................................................. 80
14.6 WAIT Delay (RCR[8]) .......................................................................................... 81
Datasheet
4페이지 28F320W30, 28F640W30, 28F128W30
Date of
Revision
01/14/03
03/22/03
11/17/03
05/06/04
05/17/04
Version
-006
-007
-008
-009
-010
Description
Revised Table 20, DC Current Characteristics, ICCS
Revised Table 20, DC Current Characteristics, ICCAPS
Removed Intel Burst order
Minor text edits
Updated Package Drawing and Dimensions
Revised Table 22, Read Operations, tAPA
Added note to table 15, Configuration Register Descriptions
Added note to section 3.1.1, Read
Updated Block Lock Operations (Sect. 7.1 and Fig. 11)
Updated improved AC timings
Added QUAD+ package option, and Appendix D
Minor text edits including new product-naming conventions
Corrected Absolute Maximum Rating for VCCQ (Sect. 10.1, Table 18)
Minor text edits
Restructured the datasheet according to new layout.
Datasheet
7
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부품번호 | 상세설명 및 기능 | 제조사 |
GE28F128W30BD70 | (GE28Fxxx Series) Wireless Flash Memory | Intel |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |