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D658Sxx PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 D658Sxx
기능 Diode
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D658Sxx 데이터시트, 핀배열, 회로
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 658 S 10...14
S
Elektrische Eigenschften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak forward reverse voltage
Tvj = - 25°C...Tvj max
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Tvj = + 25°C...Tvj max
Durchlaßstrom-Grenzeffektivwert
RMS forward current
Dauergrenzstrom
mean forward current
Stoßstrom-Grenzwert
surge foward current
Grenzlastintegral
I²t-value
TC =100°C
TC =71°C
Tvj = 25°C, tp = 10 ms
Tvj = Tvj max, tp = 10 ms
Tvj = 25°C, tp = 1 ms
Tvj = Tvj max, tp = 1 ms
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
Tvj = 25°C, tp = 1ms
Tvj = Tvj max, tp = 1ms
Charakteristische Werte / Characteristic values
Durchlaßspannung
forward voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
forward slope resistance
Typischer Wert der Durchlaßverzögerungsspannung
typical value of forward recovery voltage
Durchlaßverzögerungszeit
forward recovery time
Sperrstrom
reverse current
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Sperrverzögerungszeit
reverse recovered time
Tvj = Tvj max, iF = 2700 A
Tvj = Tvj max
Tvj = Tvj max
IEC 747-2
Tvj = Tvj max
diF/dt=50A/µs, vR=0V
IEC 747-2, Methode / method II
Tvj = Tvj max, iFM=2700A
diF/dt=50 A/µs, vR=0V
Tvj = 25°C, vR=VRRM
Tvj = Tvj max, vR = VRRM
DIN IEC 747-2, Tvj=Tvj max
iFM =900A,-diF/dt=50A/µs
vR=100V, vRM<=200 V
DIN IEC 747-2, Tvj=Tvj max
iFM =900 A,-diF/dt=50A/µs
vR=100V, vRM<=200 V
DIN IEC 747-2, Tvj=Tvj max
iFM =900A,-diF/dt=50A/µs
vR=100 V; vRM<=200V
Sanftheit
Softness
Tvj = Tvj max
iFM =A,-diF/dt=A/µs
vR<=0,5 VRRM, vRM=0,8 VRRM
1) Richtwert für obere Streubereichsgrenze / Upper limit of scatter range (standard value)
2) Richtwert für untere Streubereichsgrenze / Lower limit of scatter range (standard value)
VRRM
VRSM
IFRMSM
IFAVM
IFSM
I²t
vF
V(TO)
rT
VFRM
tfr
iR
IRM
Qr
trr
SR
1000
1200
1400
1100
1300
1500
1400
V
V
V
V
V
V
A
658
900
12200
10100
25750
21300
744200
510050
331530
226850
A
A
A
A
A
A
A²s
A²s
A²s
A²s
max.
typ
2,25 V
1V
0,45 m
2,9 V 1)
typ 5 µs 1)
max.
max.
20 mA
200 mA
87 A 1)
285 µAs 1)
4,5 µs 1)
µs/A 2)
SZ-M / 17.02.87
Seite/page 1




D658Sxx pdf, 반도체, 판매, 대치품
Technische Information / Technical Information
Schnelle Gleichrichterdiode
Fast Diode
D 658 S 10...14
S
Kühlung
cooling
Analytische Elemente des transienten Wärmewiderstandes ZthJC für DC
Analytical ementes of transient thermal impedance ZthJC for DC
beidseitig
two-sided
Pos.n
Rthn [°C/W]
τ n [s]
1 23
0,00009
0,000194
0,00256
0,000683
0,00415
0,00404
4
0,0142
0,0641
5
0,02
0,336
67
anodenseitig
anode-sided
Rthn [°C/W]
τ n [s]
0,00009
0,000194
0,00263
0,000689
0,00469
0,00459
0,0227
0,1
0,0385
3,059
0,00139
8,731
kathodenseitig
cathode-sided
Rthn [°C/W]
τ n [s]
0,00009
0,000194
0,00265
0,000692
0,00456
0,00462
0,0187
0,0841
0,0052
1,171
0,0688
2,458
Analytische Funktion / analytical function : ZthJC =
n max
= ∑ Rthn ( 1 - EXP ( - t / τn ))
n=1
SZ-M / 08.05.85
Seite/page 4

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