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PDF ST24C16 Data sheet ( Hoja de datos )

Número de pieza ST24C16
Descripción 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
Fabricantes ST Microelectronics 
Logotipo ST Microelectronics Logotipo



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No Preview Available ! ST24C16 Hoja de datos, Descripción, Manual

ST24C16, ST25C16
ST24W16, ST25W16
16 Kbit Serial I2C Bus EEPROM
with User-Defined Block Write Protection
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SINGLE SUPPLY VOLTAGE:
– 4.5V to 5.5V for ST24x16 versions
– 2.5V to 5.5V for ST25x16 versions
HARDWARE WRITE CONTROL VERSIONS:
ST24W16 and ST25W16
TWO WIRE SERIAL INTERFACE, FULLY I2C
BUS COMPATIBLE
BYTE and MULTIBYTE WRITE (up to 8
BYTES) for the ST24C16
PAGE WRITE (up to 16 BYTES)
BYTE, RANDOM and SEQUENTIAL READ
MODES
SELF TIMED PROGRAMING CYCLE
AUTOMATIC ADDRESS INCREMENTING
ENHANCED ESD/LATCH UP
PERFORMANCES
8
1
PSDIP8 (B)
0.25mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
This specification covers a range of 16 Kbit I2C bus
EEPROM products, the ST24/25C16 and the
ST24/25W16. In the text, products are referred to
as ST24/25x16 where "x" is: "C" for Standard ver-
sion and "W" for hardware Write Control version.
The ST24/25x16 are 16 Kbit electrically erasable
programmable memories (EEPROM), organized
as 8 blocks of 256 x8 bits. These are manufactured
in STMicroelectronics’s Hi-Endurance Advanced
CMOS technology which guarantees an endur-
Table 1. Signal Names
PRE
PB0, PB1
SDA
SCL
MODE
WC
VCC
VSS
Write Protect Enable
Protect Block Select
Serial Data Address Input/Output
Serial Clock
Multybyte/Page Write Mode
(C version)
Write Control (W version)
Supply Voltage
Ground
VCC
2
PB0-PB1
PRE
SCL
MODE/WC*
ST24x16
ST25x16
SDA
VSS
AI00866B
Note: WC signal is only available for ST24/25W16 products.
February 1999
1/17

1 page




ST24C16 pdf
ST24/25C16, ST24/25W16
Table 5. Input Parameters (1) (TA = 25 °C, f = 100 kHz )
Symbol
Parameter
Test Condition
CIN Input Capacitance (SDA)
CIN Input Capacitance (other pins)
ZWCL
WC Input Impedance (ST24/25W16)
VIN 0.3 VCC
ZWCH
WC Input Impedance (ST24/25W16)
VIN 0.7 VCC
tLP
Low-pass filter input time constant
(SDA and SCL)
Note: 1. Sampled only, not 100% tested.
Min Max Unit
8 pF
6 pF
5 20 k
500 k
100 ns
Table 6. DC Characteristics
(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.5V to 5.5V or 2.5V to 5.5V)
Symbol
Parameter
Test Condition
ILI Input Leakage Current
0V VIN VCC
ILO Output Leakage Current
0V VOUT VCC
SDA in Hi-Z
Supply Current (ST24 series)
ICC
Supply Current (ST25 series)
VCC = 5V, fC = 100kHz
(Rise/Fall time < 10ns)
VCC = 2.5V, fC = 100kHz
ICC1
Supply Current (Standby)
(ST24 series)
VIN = VSS or VCC,
VCC = 5V
VIN = VSS or VCC,
VCC = 5V, fC = 100kHz
ICC2
Supply Current (Standby)
(ST25 series)
VIN = VSS or VCC,
VCC = 2.5V
VIN = VSS or VCC,
VCC = 2.5V, fC = 100kHz
VIL Input Low Voltage (SCL, SDA)
VIH Input High Voltage (SCL, SDA)
VIL
Input Low Voltage
(PB0 - PB1, PRE, MODE, WC)
VIH
Input High Voltage
(PB0 - PB1, PRE, MODE, WC)
VOL Output Low Voltage (ST24 series) IOL = 3mA, VCC = 5V
Output Low Voltage (ST25 series) IOL = 2.1mA, VCC = 2.5V
Min Max
±2
±2
2
1
100
300
5
–0.3
0.7 VCC
–0.3
50
0.3 VCC
VCC + 1
0.5
VCC – 0.5 VCC + 1
0.4
0.4
Unit
µA
µA
mA
mA
µA
µA
µA
µA
V
V
V
V
V
V
5/17

5 Page





ST24C16 arduino
ST24/25C16, ST24/25W16
Write Protection. Data in the upper four blocks of
256 bytes of the memory may be write protected.
The memory is write protected between a boundary
address and the top of memory (address
7FFh).The boundary address is user defined by
writing it in the Block Address Pointer (location
7FFh).
The Block Address Pointer is an 8 bit EEPROM
register located at the address 7FFh. It is com-
posed by 4 MSBs Address Pointer, which defines
the bottom boundary address, and 4 LSBs which
must be programmed at ’0’. This Address Pointer
can therefore address a boundary by page of 16
bytes.
The block in which the Block Address Pointer de-
fines the boundary of the write protected memory
is defined by the logic level applied on the PB1 and
PB0 input pins:
– PB1 =’0’and PB0 =’0’ select block 4
– PB1 =’0’and PB0 =’1’ select block 5
– PB1 =’1’and PB0 =’0’ select block 6
– PB1 =’1’and PB0 =’1’ select block 7
The following sequence should be used to set the
Write Protection:
– write the data to be protected into the top of
the memory, up to, but not including, location
7FFh;
– select the block by hardwiring the signals PB0
& PB1;
– set the protection by writing the correct bottom
boundary address in the Address Pointer (4
MSBs of location 7FFh) with bit b2 (Protect
Flag) set to ’0’.
Note that for a correct fonctionality of the memory,
all the 4 LSBs of the Block Address Pointer must
also be programmed at ’0’. The area will be pro-
tected when the PRE input is taken High.
Remark: The Write Protection is active if and only
if the PRE input pin is driven High and the bit 2 of
location 7FFh is set to ’0’. In all the other cases, the
memory Block will not be protected. While the PRE
input pin is read at ’0’ by the memory, the location
7FFh can be used as a normal EEPROM byte.
Caution: Special attention must be used when
using the protect mode together with the Multibyte
Write mode (MODE input pin High). If the Multibyte
Write starts at the location right below the first byte
of the Write Protected area, then the instruction will
write over the first 7 bytes of the Write Protected
area. The area protected is therefore smaller than
the content defined in the location 7FFh, by 7 bytes.
This does not apply to the Page Write mode as the
address counter ’roll-over’ and thus cannot go
above the 16 bytes lower boundary of the protected
area.
Figure 9. Write Modes Sequence (ST24/25C16)
BYTE WRITE
MULTIBYTE
AND
PAGE WRITE
ACK
ACK
ACK
DEV SEL
BYTE ADDR
DATA IN
R/W
ACK
ACK
ACK
DEV SEL
BYTE ADDR DATA IN 1
DATA IN 2
R/W
ACK
ACK
DATA IN N
AI00793
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