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부품번호 | MC33102 기능 |
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기능 | DUAL SLEEP-MODE OPERATIONAL AMPLIFIER | ||
제조업체 | Motorola Semiconductors | ||
로고 | |||
전체 14 페이지수
Order this document by MC33102/D
Sleep-Mode™ Two-State,
Micropower Operational
Amplifier
The MC33102 dual operational amplifier is an innovative design concept
employing Sleep–Mode technology. Sleep–Mode amplifiers have two
separate states, a sleepmode and an awakemode. In sleepmode, the
amplifier is active and waiting for an input signal. When a signal is applied
causing the amplifier to source or sink 160 µA (typically) to the load, it will
automatically switch to the awakemode which offers higher slew rate, gain
bandwidth, and drive capability.
• Two States: “Sleepmode” (Micropower) and “Awakemode”
(High Performance)
• Switches from Sleepmode to Awakemode in 4.0 µs when Output Current
Exceeds the Threshold Current (RL = 600 Ω)
• Independent Sleepmode Function for Each Op Amp
• Standard Pinouts – No Additional Pins or Components Required
• Sleepmode State – Can Be Used in the Low Current Idle State as a
Fully Functional Micropower Amplifier
• Automatic Return to Sleepmode when Output Current Drops Below
Threshold
• No Deadband/Crossover Distortion; as Low as 1.0 Hz in the Awakemode
• Drop–in Replacement for Many Other Dual Op Amps
• ESD Clamps on Inputs Increase Reliability without Affecting Device
Operation
Sleep–Mode is a trademark of Motorola, Inc.
TYPICAL SLEEPMODE/AWAKEMODE PERFORMANCE
Characteristic
Sleepmode Awakemode
(Typical)
(Typical)
Unit
Low Current Drain
45 750 µA
Low Input Offset Voltage
0.15 0.15 mV
High Output Current Capability
0.15 50 mA
Low T.C. of Input Offset Voltage
1.0 1.0 µV/°C
High Gain Bandwidth (@ 20 kHz)
0.33 4.6 MHz
High Slew Rate
0.16 1.7 V/µs
Low Noise (@ 1.0 kHz)
MAXIMUM RATINGS
28 9.0 nV/√Hz
Ratings
Symbol
Value
Unit
Supply Voltage (VCC to VEE)
Input Differential Voltage Range
Input Voltage Range
VS
VIDR
VIR
+ 36
(Note 1)
V
V
Output Short Circuit Duration (Note 2)
Maximum Junction Temperature
Storage Temperature
tSC
(Note 2)
sec
TJ
+150
°C
Tstg – 65 to +150
Maximum Power Dissipation
PD
(Note 2)
mW
NOTES: 1. Either or both input voltages should not exceed VCC or VEE.
2. Power dissipation must be considered to ensure maximum junction temperature (TJ)
is not exceeded (refer to Figure 1).
MC33102
DUAL SLEEP–MODE
OPERATIONAL AMPLIFIER
SEMICONDUCTOR
TECHNICAL DATA
D SUFFIX
PLASTIC PACKAGE
CASE 751
(SO–8)
8
1
P SUFFIX
PLASTIC PACKAGE
CASE 626
8
1
PIN CONNECTIONS
Output 1 1
Inputs 1
2
3
VEE 4
1
8 VCC
7 Output 2
6
2
5
Inputs
2
(Dual, Top View)
ORDERING INFORMATION
Device
Operating
Temperature Range
Package
MC33102D
TA = – 40° to +85°C
MC33102P
SO–8
Plastic DIP
MOTOROLA ANALOG IC DEVICE DATA
© Motorola, Inc. 1996
Rev 0
1
MC33102
AC ELECTRICAL CHARACTERISTICS (VCC = +15 V, VEE = –15 V, TA = 25°C, unless otherwise noted.)
Characteristics
Figure
Symbol
Min
Typ
Slew Rate (Vin = –5.0 V to +5.0 V, CL = 50 pF, AV = 1.0)
Sleepmode (RL = 1.0 MΩ)
Awakemode (RL = 600 Ω)
Gain Bandwidth Product
Sleepmode (f = 10 kHz)
Awakemode (f = 20 kHz)
18
19
SR
GBW
0.10 0.16
1.0 1.7
0.25 0.33
3.5 4.6
Sleepmode to Awakemode Transition Time
(ACL = 0.1, Vin = 0 V to +5.0 V)
RL = 600 Ω
RL = 10 kΩ
Awakemode to Sleepmode Transition Time
Unity Gain Frequency (Open Loop)
Sleepmode (RL = 100 kΩ, CL = 0 pF)
Awakemode (RL = 600 Ω, CL = 0 pF)
Gain Margin
Sleepmode (RL = 100 kΩ, CL = 0 pF)
Awakemode (RL = 600 Ω, CL = 0 pF)
Phase Margin
Sleepmode (RL = 100 kΩ, CL = 0 pF)
Awakemode (RL = 600 Ω, CL = 0 pF)
Channel Separation (f = 100 Hz to 20 kHz)
Sleepmode and Awakemode
20, 21
ttr1
22
23, 25
24, 26
29
ttr2
fU
AM
∅M
CS
— 4.0
— 15
— 1.5
— 200
— 2500
— 13
— 12
— 60
— 60
— 120
Power Bandwidth (Awakemode)
(VO = 10 Vpp, RL = 100 kΩ, THD ≤ 1%)
Total Harmonic Distortion (VO = 2.0 Vpp, AV = 1.0)
Awakemode (RL = 600 Ω)
f = 1.0 kHz
f = 10 kHz
f = 20 kHz
BWP
— 20
30 THD
— 0.005
— 0.016
— 0.031
DC Output Impedance (VO = 0 V, AV = 10, IQ = 10 µA)
Sleepmode
Awakemode
31
RO
— 1.0 k
— 96
Differential Input Resistance (VCM = 0 V)
Sleepmode
Awakemode
Rin
— 1.3
— 0.17
Differential Input Capacitance (VCM = 0 V)
Sleepmode
Awakemode
Cin
— 0.4
— 4.0
Equivalent Input Noise Voltage (f = 1.0 kHz, RS = 100 Ω)
Sleepmode
Awakemode
32
en
— 28
— 9.0
Equivalent Input Noise Current (f = 1.0 kHz)
Sleepmode
Awakemode
33 in
— 0.01
— 0.05
Max Unit
V/µs
—
—
MHz
—
—
µs
—
—
— sec
kHz
—
—
dB
—
—
Degrees
—
—
dB
—
kHz
—
%
—
—
—
Ω
—
—
MΩ
—
—
pF
—
—
nV/√Hz
—
—
pA/√Hz
—
—
4 MOTOROLA ANALOG IC DEVICE DATA
4페이지 MC33102
Figure 13. Sleepmode to Awakemode
Current Threshold versus Supply Voltage
200
190
180
170
TA = – 55°C
160
TA = 25°C
150
140
3.0
TA = 125°C
6.0 9.0 12
15
VCC, VEE, SUPPLY VOLTAGE (V)
18
Figure 14. Awakemode to Sleepmode
Current Threshold versus Supply Voltage
190
180
170
TA = 25°C
160
TA = – 55°C
150
TA = 125°C
140
130
120
3.0
6.0 9.0 12 15
VCC, VEE, SUPPLY VOLTAGE (V)
18
Figure 15. Output Short Circuit Current
versus Output Voltage
120
100
Source
80
Sink
60
40 VCC = +15 V
VEE = –15 V
20
VID = ± 1.0 V
RL < 10 Ω
Awakemode
0 0 3.0 6.0 9.0 12
VO, OUTPUT VOLTAGE (V)
15
Figure 16. Output Short Circuit Current
versus Temperature
150
140
Source
130
120
Sink
110
VCC = +15 V
VEE = –15 V
VID = ± 1.0 V
RL < 10 Ω
Awakemode
100
90
80
70
–55 –40 –25 0 25 50
85
TA, AMBIENT TEMPERATURE (°C)
125
Figure 17. Power Supply Current Per Amplifier
versus Temperature
60 1.2
55 1.0
50 0.8
Awakemode (mA)
45 0.6
Sleepmode (µA)
40
0.4
VCC = +15 V
35 VEE = –15 V
No Load
30
–55 –40 –25 0 25 50
85
TA, AMBIENT TEMPERATURE (°C)
0.2
0
125
Figure 18. Slew Rate versus Temperature
0.20
VCC = +15 V
0.18
VEE = –15 V
∆Vin = – 5.0 V to + 5.0 V
Awakemode (RL = 600 Ω)
2.0
1.8
0.16 1.6
0.14 1.4
0.12
Sleepmode (RL = 1.0 MΩ)
0.10–55 –40 –25 0 25 50
85
TA, AMBIENT TEMPERATURE (°C)
1.2
1.0
125
MOTOROLA ANALOG IC DEVICE DATA
7
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MC3310 | Motion Processor | ETC |
MC33102 | DUAL SLEEP-MODE OPERATIONAL AMPLIFIER | Motorola Semiconductors |
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