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AAT3190 데이터시트 PDF




ANALOGICTECH에서 제조한 전자 부품 AAT3190은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 AAT3190 기능
기능 Positive/Negative Charge Pump for Voltage Bias
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AAT3190 데이터시트, 핀배열, 회로
AAT3190
Positive/Negative Charge Pump for Voltage Bias
General Description
The AAT3190 charge pump controller provides the
regulated positive and negative voltage biases
required by active matrix thin-film transistor (TFT)
liquid-crystal displays (LCDs), charge-coupled
device (CCD) sensors, and organic light emitting
diodes (OLEDs). Two low-power charge pumps
convert input supply voltages ranging from 2.7V to
5.5V into two independent output voltages.
The dual low-power charge pumps independently
regulate a positive (VPOS) and negative (VNEG) out-
put voltage. These outputs use external diode and
capacitor multiplier stages (as many stages as
required) to regulate output voltages up to ±25V.
Built-in soft-start circuitry prevents excessive in-
rush current during start-up. A high switching fre-
quency enables the use of small external capaci-
tors. The device’s shutdown feature disconnects
the load from VIN and reduces quiescent current to
less than 1.0µA.
The AAT3190 is available in an MSOP-8 or
TSOPJW-12 package and is specified over the
-40°C to +85°C operating temperature range.
Features
ChargePump
• VIN Range: 2.7V to 5.5V
• Adjustable ± Dual Charge Pump
• Positive Supply Output Up to +25V
• Negative Supply Output Down to -25V
• Up to 30mA Output Current
• 1.0MHz Switching Frequency
• <1.0µA Shutdown Current
• Internal Power MOSFETs
• Internally Controlled Soft Start
• Fast Transient Response
• Ultra-Thin Solution (No Inductors)
• -40°C to +85°C Temperature Range
• Available in 8-Pin MSOP or 12-Pin TSOPJW
Package
Applications
• CCD Sensor Voltage Bias
• OLEDs
• Passive-Matrix Displays
• Personal Digital Assistants (PDAs)
• TFT Active-Matrix LCDs
Typical Application
INPUT
EN
NEGATIVE
OUTPUT
IN
EN
DRVN
AAT3190
FBN
DRVP
REF
FBP
GND
POSTIVE
OUTPUT
3190.2005.03.1.0
1




AAT3190 pdf, 반도체, 판매, 대치품
AAT3190
Positive/Negative Charge Pump for Voltage Bias
Electrical Characteristics
VIN = 5.0V, CREF = 0.1µF, TA = -40°C to +85°C. Unless otherwise noted, typical values are at TA = 25°C.
Symbol Description
Conditions
VIN
UVLO
IIN
Input Supply Range
Input Under-Voltage Threshold
Input Quiescent Supply Current
ISD Shutdown Supply Current
FOSC
Operating Frequency
Negative Low-Power Charge Pump
VFBN
FBN Regulation Voltage
IFBN FBN Input Bias Current
RDSNCHN DRVN NCH On-Resistance
RDSPCHMIN MIN DRVN PCH On-Resistance
RDSPCHMAX MAX DRVN PCH On-Resistance
Positive Low-Power Charge Pump
VFBP
IFBP
RDSPCHP
RDSNCHMIN
RDSNCHMIN
Reference
FBP Regulation Voltage
FBP Input Bias Current
DRVP PCH On-Resistance
MIN DRVP NCH On-Resistance
MAX DRVP NCH On-Resistance
Reference Voltage
VREF
Reference Under-Voltage
Threshold
Logic Signals
VIL Input Low Voltage
VIH Input High Voltage
IIL Enable Input Low Current
IIH Enable Input High Current
Thermal Limit
TSD Over-Temperature Shutdown
Threshold
THYST
Over-Temperature Shutdown
Hysteresis
VIN Rising
VIN Falling, 40mV Hysteresis (typ)
VFBP = 1.5V, VFBN = -0.2V,
No Load on DRVN and DRVP
VEN = 0 V
VFBN = -50mV
VFBN = 100mV, VIN = 4V
VFBN = -100mV, VIN = 4V
VFBP = 1.5V
VFBP = 1.15V, VIN = 4V
VFBP = 1.25V, VIN = 4V
-2.0 µA < IREF < 50 µA
VREF Rising
VIN = 5.0V, FBP = 1.5V, FBN = -0.2V
VIN = 5.0V, FBP = 1.5V, FBN = -0.2V
Min Typ Max Units
2.7 5.5 V
1.8 V
1.6
400 800 µA
0.1 1.0 µA
0.8 1.0 1.2 MHz
-100
-100
0 +100
+100
1.5 5.0
1.0 5.0
20
mV
nA
k
1.15 1.2 1.25
-60 +100
1.0 5.0
3 15
20
V
nA
k
1.18 1.2 1.22
0.8
V
V
0.5
1.5
1
1
140
15
V
V
µA
µA
°C
°C
4 3190.2005.03.1.0

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AAT3190 전자부품, 판매, 대치품
AAT3190
Positive/Negative Charge Pump for Voltage Bias
Typical Characteristics
Output Ripple
(VPOS = 12.3V; IPOS = 5mA; VNEG = 7.2V; INEG = 10mA)
VPOS
(10mV/div)
VNEG
(10mV/div)
500nsec/div
Positive Output Voltage vs. Load Current
(T = 85°C)
12.4
VIN = 5.0V
12.2
12
11.8
11.6
11.4
0
10 20
IPOS (mA)
30
40
Negative Output Voltage vs. Load Current
(T = 85°C)
-6.5
VIN = 5.0V
-6.75
-7
-7.25
-7.5
-7.75
-8
0
10
20
INEG (mA)
30
40
AAT3190 Reference Undervoltage Threshold
(120µF capacitor placed across REF to limit rate of rise
of REF for test purposes only)
SHDN
(2V/div)
0.5V
REF
(0.2V/div)
DRVN
(2V/div)
500nsec/div
3190.2005.03.1.0
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