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PDF K2141 Data sheet ( Hoja de datos )
| Número de pieza | K2141 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2141
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2141 is N-channel Power MOS Field Effect Transis-
tor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
FEATURES
• Low On-state Resistance
RDS(on) = 1.1 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• LOW Ciss Ciss = 1150 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 (MP-45F) Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
600
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±6.0
A
Drain Current (pulse)
ID (pulse)* ±24
A
Total Power Dissipation (TC = 25 °C) PT1
35 W
Total Power Dissipation (Ta = 25 °C) PT2
2.0 W
Storage Temperature
Tstg –55 to +150 °C
Channel Temperature
Tch 150 °C
Single Avalanche Current
IAS**
6.0
A
Single Avalanche Energy
EAS**
12
mJ
*PW ≤ 10 µs, Duty Cycle ≤ 1%
**Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
10.0 ± 0.3
φ3.2 ± 0.2
4.5 ± 0.2
2.7 ± 0.2
123
0.7 ± 0.1
2.54 TYP.
1.3 ± 0.2 0.65 ± 0.1
1.5 ± 0.2
2.54 TYP.
2.5 ± 0.1
123
1. Gate
2. Drain
3. Source
ISOLATED TO-220 (MP-45F)
Drain (D)
The diode connected between the gate and source of the
transistor serves as a protector against ESD. When this device
is actually used, an additional protection circuit is externally
required if a voltage exceeding the rated voltage may be
applied to this device.
Gate (G)
Body diode
Source (S)
Document No. TC-2514
(O.D. No. TC–8073)
Date Published January 1995 P
Printed in Japan
© 1995
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
3.0
VGS = 10 V
Pulsed
2.0
ID = 6 A
3A
1.0
0
–50
10 000
0 50 100
Tch - Channel Temperature - °C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
150
1 000
Ciss
100
Coss
Crss
TC = 25 °C
Single Pulse
10
1.0 10
100
VDS - Drain to Source Voltage - V
1 000
DYNAMIC INPUT CHARACTERISTICS
800 16
ID = ID (DC)
14
600 VDD = 450 V
300 V
120 V
VGS
12
10
400 8
6
200
VDS
4
2
0
0 20 40 60 80
Qg - Gate Charge - nC
2SK2141
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
10
VGS = 10 V
1.0
VGS = 0 V
0.1
0.01
0
Pulsed
0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td (off)
td (on)
VDD = 150 V
VGS = 10 V
1.0 RG = 10 Ω
1.0
10
ID - Drain Current - A
100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
800 di/dt = 50 A/µs
VGS = 10 V
600
400
200
0
0.1 1.0 10 100
Diode Forward Current - A
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2141.PDF ] | |
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