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Datasheet MTP6N60 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MTP6N60N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

MTP6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE MTP6N60 s s s s s V DSS 600 V R DS( on) < 1.2 Ω ID 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED CHARACTERIZATION 3 1 2 APPLICATIONS HIGH C
ST Microelectronics
ST Microelectronics
transistor
2MTP6N60Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
3MTP6N60ETMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP6N60E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP6N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide e
Motorola Semiconductors
Motorola Semiconductors
data
4MTP6N60EPower Field Effect Transistor

MTP6N60E Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high e
ON Semiconductor
ON Semiconductor
transistor


MTP Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MTP1013C3-20V P-CHANNEL Enhancement Mode MOSFET

CYStech Electronics Corp. -20V P-CHANNEL Enhancement Mode MOSFET Spec. No. : C698C3 Issued Date : 2012.07.06 Revised Date : 2012.10.05 Page No. : 1/ 8 MTP1013C3 Features BVDSS ID RDSON@VGS=-4.5V, ID=-500mA RDSON@VGS=-2.5V, ID=-300mA RDSON@VGS=-1.8V, ID=-150mA -20V -500mA 0.63Ω(typ) 1.1Ω(typ) 1
CYStech Electronics
CYStech Electronics
mosfet
2MTP10N05(MTP10N05 / MTP10N06) N-Channel Power MOSFETs

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Motorola Semiconductors
Motorola Semiconductors
mosfet
3MTP10N06(MTP10N05 / MTP10N06) N-Channel Power MOSFETs

w w w .D at aS he et 4U .c om
Motorola Semiconductors
Motorola Semiconductors
mosfet
4MTP10N08(MTP10N08 / MTP10N10) N-Channel Power MOSFETs

( )
Fairchild Semiconductor
Fairchild Semiconductor
mosfet
5MTP10N08(MTP10N08 / MTP10N10) Power Field Effect Transistor

( )
Motorola Semiconductor
Motorola Semiconductor
transistor
6MTP10N08Trans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
7MTP10N08LTrans MOSFET N-CH 80V 10A 3-Pin(3+Tab) TO-220AB

New Jersey Semiconductor
New Jersey Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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