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부품번호 | 0809LD120 기능 |
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기능 | 120 Watt / 28V / 1 Ghz LDMOS FET | ||
제조업체 | GHZ Technology | ||
로고 | |||
전체 1 페이지수
R.0.2P.991602-BEHRE
0809LD120
120 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD120 is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QV
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd)
Thermal Resistance (θJC)
Voltage and Current
Drain-Source (VDSS)
Gate-Source (VGS)
Temperatures
Storage Temperature
Operating Junction Temperature
300 W
.6°C/W
65V
±20V
-65 to +200°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C PER SIDE
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
ΒVdss
Idss
Igss
Drain-Source Breakdown
Drain-Source Leakage Current
Gate-Source Leakage Current
Vgs = 0V, Id = 2ma
Vds = 28V, Vgs= 0V
Vgs = 20V, Vds = 0V
65 70
1
1
Vgs(th)
Gate Threshold Voltage
Vds(on)
Drain-Source On Voltage
gFS Forward Transconductance
Crss Reverse Transfer Capacitance
Coss Output Capacitance
This part is input matched.
Vds = 10V, Id = 100ma
Vgs = 10V, Id = 3A
Vds = 10V, Id = 3A
Vds = 28V, Vgs = 0V, F = 1 MHz
Vds = 28V, Vgs = 0V, F = 1 MHz
2
4
0.7
2.2
5
60
5
FUNCTIONAL CHARACTERISTICS @ 25°C
GPS
ηd
IMD3
Ψ
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion,
3rd Order
Load Mismatch
Vds = 28V, Idq = 0.6A,
F = 900MHz, Pout = 120W
Vds = 28V, Idq = 0.6A,
F = 900MHz, Pout = 120W
Vds = 28V, Idq = 0.6A,
Pout=120W PEP, F1 = 900 MHz,
F2 = 900.1 MHz
Vds = 28V, Idq = 0.6A,
F = 900MHz, Pout = 120W
13
50
-30
5:1
V
A
A
V
V
S
pF
pF
dB
%
dBc
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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구 성 | 총 1 페이지수 | ||
다운로드 | [ 0809LD120.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
0809LD120 | 120 Watt / 28V / 1 Ghz LDMOS FET | GHZ Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |