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부품번호 | 0809LD60P 기능 |
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기능 | 60 Watt / 28V / 1 Ghz LDMOS FET | ||
제조업체 | GHZ Technology | ||
로고 | |||
R.0.2P.991602-BEHRE
0809LD60P
60 WATT, 28V, 1 GHz
LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD60P is a common source N-Channel enhancement mode lateral
MOSFET capable of providing 60 Watts of RF power from HF to 1 GHz. The
device is nitride passivated and utilizes gold metallization to ensure high
reliability and supreme ruggedness.
CASE OUTLINE
55QU
Common Source
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25°C (Pd)
Thermal Resistance (θJC)
Voltage and Current
Drain-Source (VDSS)
Gate-Source (VGS)
Temperatures
Storage Temperature
Operating Junction Temperature
170 W
1.0°C/W
65V
±20V
-65 to +200°C
+200°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
ΒVdss
Idss
Igss
Vgs(th)
Vds(on)
gFS
Ciss
Crss
Coss
Drain-Source Breakdown
Vgs = 0V, Id = 2ma
Drain-Source Leakage Current Vds = 28V, Vgs= 0V
65 70
Gate-Source Leakage Current Vgs = 20V, Vds = 0V
Gate Threshold Voltage
Drain-Source On Voltage
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Vds = 10V, Id = 100ma
Vgs = 10V, Id = 3A
Vds = 10V, Id = 3A
Vds = 28V, Vgs = 0V, F = 1 MHz
Vds = 28V, Vgs = 0V, F = 1 MHz
Vds = 28V, Vgs = 0V, F = 1 MHz
2
4
0.7
2.2
90
5
60
1
1
5
V
A
A
V
V
S
pF
pF
pF
FUNCTIONAL CHARACTERISTICS @ 25°C
GPS
ηd
IMD3
Ψ
Common Source Power Gain
Drain Efficiency
Intermodulation Distortion,
3rd Order
Load Mismatch
Vds = 28V, Idq = 0.3A,
F = 900MHz, Pout = 60W
Vds = 28V, Idq = 0.3A,
F = 900MHz, Pout = 60W
Vds = 28V, Idq = 0.3A,
Pout =60WPEP, F1 = 900 MHz,
F2 = 900.1 MHz
Vds = 28V, Idq = 0.3A,
F = 900MHz, Pout = 60W
14 dB
50 %
-30 dBc
10:1
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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구 성 | 총 1 페이지수 | ||
다운로드 | [ 0809LD60P.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
0809LD60 | 60 Watt / 28V / 1 Ghz LDMOS FET | GHZ Technology |
0809LD60P | 60 Watt / 28V / 1 Ghz LDMOS FET | GHZ Technology |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |