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PDF STD19NE06 Data sheet ( Hoja de datos )
| Número de pieza | STD19NE06 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STD19NE06
N-CHANNEL 60V - 0.042 Ω - 19A IPAK/DPAK
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STD19NE06
60 V <0.050 Ω 19 A
s TYPICAL RDS(on) = 0.042 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s 175 oC OPERATING TEMPERATURE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s DC MOTOR CONTROL
s DC-DC & DC-AC CONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM(•)
Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
EAS (1) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 2002
.
Value
60
60
± 20
19
13.5
76
70
0.46
1.45
-55 to 175
(1) Starting Tj = 25 oC, ID = 30A, VDD = 30 V
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
1/9
1 page  
Normalized Gate Threshold Voltage vs Temperature
STD19NE06
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
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5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD19NE06.PDF ] | |
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