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PDF STD16NE10 Data sheet ( Hoja de datos )
| Número de pieza | STD16NE10 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | ST Microelectronics | |
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® STD16NE10
N - CHANNEL 100V - 0.07Ω - 16A - IPAK/DPAK
STripFET™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST D16NE10
100 V < 0.1 Ω
16 A
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size™ ”
strip-based process.The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s DC MOTOR CONTROL (DISK DRIVERS,etc.)
s DC-DC & DC-ACCONVERTERS
s SYNCHRONOUS RECTIFICATION
3
2
1
IPAK
TO-251
(Suffix ”-1”)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM ( •)
Ptot
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Uni t
100 V
100 V
± 20
V
16 A
11 A
64 A
50
0.33
W
W/oC
7 V/ ns
-65 to 175
oC
175 oC
(1) ISD ≤ 16 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STD16NE10
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STD16NE10.PDF ] | |
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