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Número de pieza | UAA2073M | |
Descripción | Image rejecting front-end for GSM applications | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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No Preview Available ! INTEGRATED CIRCUITS
DATA SHEET
UAA2073M
Image rejecting front-end
for GSM applications
Product specification
Supersedes data of July 1995
File under Integrated Circuits, IC03
1995 Dec 07
1 page Philips Semiconductors
Image rejecting front-end
for GSM applications
Product specification
UAA2073M
FUNCTIONAL DESCRIPTION
Receive section
The circuit contains a low-noise amplifier followed by two
high dynamic range mixers. These mixers are of the
Gilbert-cell type. The whole internal architecture is fully
differential.
The local oscillator, shifted in phase to 45° and 135°,
mixes the amplified RF to create I and Q channels. The
two I and Q channels are buffered, phase shifted by 45°
and 135° respectively, amplified and recombined internally
to realize the image rejection.
Pin SBS allows sideband selection:
• fLO < fRF (SBS = 1)
• fLO > fRF (SBS = 0).
Balanced signal interfaces are used for minimizing
crosstalk due to package parasitics. The RF differential
input impedance is 150 Ω (parallel real part), choosen to
minimize current consumption at best noise performance.
The IF output is differential and of the open-collector type,
tuned for 71 MHz. Typical application will load the output
with a differential 500 Ω load; i.e. a 500 Ω resistor load at
each IF output, plus a 1 kΩ to x Ω narrow band matching
network (x Ω being the input impedance of the IF filter).
The path to VCC for the DC current is achieved via tuning
inductors. The output voltage is limited to VCC + 3Vbe or
3 diode forward voltage drops.
Fast switching, on/off, of the receive section is controlled
by the hardware input RXON.
handbook, full pagewidth
VCC1
RFINA
RFINB
GND1
LNA
SYNTHON
MIXER
IF
amplifier
MIXER
IF
amplifier
LOIN
+45o
SBS
IF
COMBINER
+135o
RXON
IFA
IFB
MBG795
Fig.3 Block diagram, receive section.
1995 Dec 07
5
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RFIN
925 to 960 MHz
TXIN
880 to 915 MHz
10 pF
18 pF C33
L2 15 nH
C3 1.5 pF
L3 15 nH
C1 1.5 pF
L5 15 nH
C5 2.2 pF
L4 15 nH
C6 2.2 pF
SBS
C20
27 pF
R5
680 kΩ
VCC
C24
C23
1 nF 27 pF
C2
27 pF
C4
L1
18 nH
27 pF
C8
27 pF
C7
27 pF
L6
27 nH
2
SYNTHON
2
1 20
2 19
3 18
4 17
5 16
UAA2073M
6 15
7 14
8 13
9 12
10 11
RXON
2
C26
1 27
pF
R9 C25
680 1 27
kΩ pF
R8 C27
680 1 27
kΩ pF
R3
680 Ω
5V
R4
680 Ω
L11 C17
470 1 nF IFA
nH
L12 C19
470
IFB
10 pF
nH
270 nH
L16
C34
18 pF
IFO
71 MHz
C18 L15 270 nH
L8 6.8 nH
C12
27 pF
C11
VCC
27 pF
27 pF
C15
R1
C13
180 Ω 390 pF
R2 C14
180 Ω 390 pF
TXON
C9 2.7 pF
L7 6.8 nH
C10 2.7 pF
L14 220 nH
C31 8.2 pF
L13 220 nH
C32 8.2 pF
LOIN
854 to 1032 MHz
TXOIF
117 MHz
R10
680
kΩ
C28
120 pF
VCC
MBG798
All matching is to 50 Ω for measurement purposes.
Different values will be used in a real application.
Fig.6 Philips demonstration board diagram for GSM applications.
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet UAA2073M.PDF ] |
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