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Número de pieza | MPS6727 | |
Descripción | (MPS6726) One Watt Amplifier Transistor | |
Fabricantes | Motorola Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MPS6727 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6726/D
One Watt Amplifier Transistor
PNP Silicon
COLLECTOR
3
2
BASE
MPS6726
MPS6727
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPS6726
MPS6727
VCEO
–30
–40
Vdc
Collector – Base Voltage
MPS6726
MPS6727
VCBO
–40
–50
Vdc
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
–5.0 Vdc
–1.0 Adc
1.0 Watts
8.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
MPS6726
MPS6727
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
MPS6726
MPS6727
Emitter – Base Breakdown Voltage
(IE = –100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = –40 Vdc, IE = 0)
(VCB = –50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
MPS6726
MPS6727
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
Max
Unit
V(BR)CEO
V(BR)CBO
V(BR)EBO
–30
–40
–40
–50
–5.0
—
—
—
—
—
Vdc
Vdc
Vdc
ICBO
µAdc
— –0.1
— –0.1
IEBO — –0.1 µAdc
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet MPS6727.PDF ] |
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