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PDF MPS6714 Data sheet ( Hoja de datos )
| Número de pieza | MPS6714 | |
| Descripción | (MPS6715) One Watt Amplifier Transistors | |
| Fabricantes | Motorola Semiconductors | |
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Hay una vista previa y un enlace de descarga de MPS6714 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MPS6714/D
One Watt Amplifier Transistors
NPN Silicon
COLLECTOR
3
2
BASE
MPS6714
MPS6715
1
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
MPS6714
MPS6715
VCEO
30
40
Vdc
Collector – Base Voltage
MPS6714
MPS6715
VCBO
40
50
Vdc
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
5.0 Vdc
1.0 Adc
1.0 Watts
8.0 mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5 Watts
20 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
Thermal Resistance, Junction to Case
RqJC
50
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W
°C/W
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 10 mAdc, IB = 0)
MPS6714
MPS6715
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
MPS6714
MPS6715
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 40 Vdc, IE = 0)
(VCB = 50 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
v v1. Pulse Test: Pulse Width 30 ms; Duty Cycle 2.0%.
MPS6714
MPS6715
1
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
Symbol
Min
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
30
40
40
50
5.0
—
—
—
Max Unit
Vdc
—
—
Vdc
—
—
— Vdc
µAdc
0.1
0.1
0.1 µAdc
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MPS6714.PDF ] | |
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