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PDF STP6NC90Z Data sheet ( Hoja de datos )
| Número de pieza | STP6NC90Z | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
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STP6NC90Z - STP6NC90ZFP
STB6NC90Z - STB6NC90Z-1
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP6NC90Z
STP6NC90ZFP
STB6NC90Z
STB6NC90Z-1
900 V
900 V
900 V
900 V
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
5.4 A
5.4 A
5.4 A
5.4 A
s TYPICAL RDS(on) = 1.55Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
TO-220
3
1
D²PAK
3
2
1
TO-220FP
123
I²PAK
(Tabless TO-220)
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
July 2002
Value
Unit
STP(B)6NC90Z(-1) STP6NC90ZFP
900 V
900 V
± 25 V
5.4
5.4(*)
A
3.43
3.43(*)
A
21 21 A
135 40 W
1.08 0.32 W/°C
±50 mA
3 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD ≤5.4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2).Limited only by maximum temperature allowed
1/13
1 page  
Transconductance
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
5 Page 
DIM.
A
A1
A2
B
B2
C
C2
D
D1
E
E1
G
L
L2
L3
M
R
V2
MIN.
4.4
2.49
0.03
0.7
1.14
0.45
1.23
8.95
10
4.88
15
1.27
1.4
2.4
0º
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
D2PAK MECHANICAL DATA
mm.
TYP
8
8.5
0.4
MAX.
4.6
2.69
0.23
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
3.2
8º
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
0.393
0.192
0.590
0.050
0.055
0.094
inch
TYP.
0.315
0.334
0.015
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
0.208
0.625
0.055
0.068
0.126
11/13
1
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STP6NC90Z.PDF ] | |
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