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PDF BSS70 Data sheet ( Hoja de datos )
| Número de pieza | BSS70 | |
| Descripción | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS | |
| Fabricantes | ETC | |
| Logotipo |  |
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SOT23 PNP SILICON PLANAR MEDIUM
POWER SWITCHING TRANSISTORS
ISSUE 2 SEPTEMBER 1995 7
BSS69
BSS70
PARTMARKING DETAILS
BSS69 - L2
BSS70 - L3
BSS69R - L6
BSS70R - L7
ABSOLUTE MAXIMUM RATINGS.
E
C
B
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation at Tamb=25°C
PTOT
Operating and Storage Temperature Range tj:tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
-40
-40
-5
-200
-100
-50
330
-55 to +150
V
V
V
mA
mA
mA
mW
°C
UNIT
CONDITIONS.
Collector-Emitter Breakdown Voltage V(BR)CEO
Collector-Base Breakdown Voltage
V(BR)CBO
Emitter-Base Breakdown Voltage
V(BR)EBO
Collector- Emitter Cut-off Current
ICES
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter Saturation Voltage
VBE(sat)
Static Forward Current
Transfer Ratio
BSS69
hFE
Static Forward Current BSS70
Transfer Ratio
hFE
Transition Frequency
BSS69
BSS70
Collector-Base Capacitance
Emitter-Base Capacitance
Noise Figure
fT
Cobo
Cibo
N
-40
-40
-5
-0.65
30
40
50
30
15
60
80
100
60
30
200
250
Typ. 5
-50
-0.25
-0.40
-0.85
-0.95
150
300
4.5
10
V
V
V
nA
V
V
V
V
MHz
MHz
pF
pF
dB
Switching times: Delay; Rise
Storage Time
Fall Time
td; tf
ts
tf
35 ns
225 ns
70 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
IC=-1mA
IC=-10µA
IE=-10µA
VCES=-30V
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-10mA, IB=-1mA
IC=-50mA, IB=-5mA*
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
IC=-100µA,
IC=-1mA,
IC=-10mA, VCE=-1V
IC=-50mA*,
IC=-100mA*,
IC=-10mA, VCE=-20V
f=100MHz
VCB=-5V, f=100kHz
VEB=-0.5V, f=100kHz
IC=-100µΑ, VCE=-5V
RS=1kΩ, f=10Hz to15.7 kHz
VCC=-3V, IC=-10mA
IB1= IB2 =-1mA
PAGE NUMBER
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet BSS70.PDF ] | |
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