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부품번호 | UBA1710M 기능 |
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기능 | Modulator for GaAs power amplifiers | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
INTEGRATED CIRCUITS
DATA SHEET
UBA1710M
Modulator for GaAs power
amplifiers
Product specification
Supersedes data of 1997 Feb 18
File under Integrated Circuits, IC17
1997 Oct 17
Philips Semiconductors
Modulator for GaAs power amplifiers
Product specification
UBA1710M
FUNCTIONAL DESCRIPTION
Power control section
Power control for GaAs PAs from the CGY20xx family is
achieved by varying the drain voltage. This is achieved
with the UBA1710M by means of the two power MOS
devices integrated on-chip. They enable separate control
of the PA output stage from the pre-amplifier stages.
They have a very low ‘on’ resistance for low drop voltage
at high RF output power.
The MOS devices are driven by a buffer. The buffer
amplifier, in association with power MOS, is included in a
feedback loop to exhibit a high cut-off frequency (3 MHz)
over the whole control dynamic range. This buffer allows
fast switching of the MOS in accordance with GSM power
ramping requirements.
DC-DC converters
One DC-DC converter is required to provide negative gate
biasing to the GaAs PA.
The standard value is typically −2 V, without any external
resistor connected. The other one is a voltage tripler and
is required to supply the MOS driver. The driver is required
to raise the MOS gate voltage well above the battery
voltage in order to open the MOS switches
(‘high side’ driver).
These DC-DC converters are operated at a typical
frequency of 600 kHz supplied by an internal oscillator.
Five external capacitors with a typical value of 0.1 µF
(0603 SMD) are required to operate these converters.
Power management
The power management disables the PA drain voltage and
prevents the PA from burnout if drain voltage is supplied
before the negative gate voltage is available.
Standby mode
An additional feature includes a standby mode, reducing
the current consumption to a maximum value of 1 µA.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134); general operating conditions applied.
SYMBOL
VCC
VDD
VI
II
Ptot
Tstg
Tamb
PARAMETER
analog supply voltage
digital supply voltage
DC input voltage
all pins (except BUFI)
pin BUFI
DC current into any signal pin
total power dissipation
storage temperature
operating ambient temperature
MIN.
−0.5
−0.5
MAX.
+9.0
+9.0
UNIT
V
V
−0.5 +9.0 V
−0.5 +5.0 V
−10 +10 mA
− 0.65 W
−65
+150
°C
−20 +85 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
100
UNIT
K/W
1997 Oct 17
4
4페이지 Philips Semiconductors
Modulator for GaAs power amplifiers
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
Product specification
UBA1710M
SOT266-1
D
y
Z
20
c
11
EA
X
HE v M A
pin 1 index
1
e
10
wM
bp
A2
A1
Q
(A3)
A
Lp
L
detail X
θ
0 2.5 5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c D(1) E(1) e
HE
L
Lp
Q
v
w
y Z (1) θ
mm
1.5
0.15
0
1.4
1.2
0.25
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1.0
0.75 0.65
0.45 0.45
0.2
0.13
0.1
0.48
0.18
10o
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT266-1
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
90-04-05
95-02-25
1997 Oct 17
7
7페이지 | |||
구 성 | 총 12 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
UBA1710M | Modulator for GaAs power amplifiers | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |