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MTB50N06EL 데이터시트 PDF




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부품번호 MTB50N06EL 기능
기능 TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS
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MTB50N06EL 데이터시트, 핀배열, 회로
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTB50N06EL/D
Advance Information
TMOS E-FET.
Power Field Effect Transistors
D2PAK for Surface Mount
Logic Level TMOS (L2TMOSāā)
N–Channel Enhancement–Mode Silicon Gate
These TMOS Power FETs are designed for high speed, low loss
power switching applications such as switching regulators, convert-
ers, solenoid and relay drivers. This Logic Level Series part is
specified to operate with level logic gate–to–source voltage of 5 volt
and 4 volt.
Silicon Gate for Fast Switching Speeds
Low RDS(on) — 0.028 max
Replace External Zener Transient Suppressor — Absorbs High
Energy in the Avalanche Mode
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
G
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
MTB50N06EL
Motorola Preferred Device
TMOS POWER FET
LOGIC LEVEL
50 AMPERES
60 VOLTS
RDS(on) = 0.028 OHM
®
D
CASE 418B–02, Style 2
D2PAK
S
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M)
Gate–Source Voltage — Continuous
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted with the minimum recommended pad size
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vpk, IL = 50 Apk, L = 0.32 mH, RG = 25 )
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
VDSS
VDGR
VGS
ID
ID
IDM
PD
TJ, Tstg
EAS
RθJC
RθJA
RθJA
TL
60
60
±15
50
28
142
125
1.0
2.5
– 55 to 150
400
1.0
62.5
50
260
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET, Designer’s and L2TMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoottoororolal,aInTc.M19O9S4 Power MOSFET Transistor Device Data
1




MTB50N06EL pdf, 반도체, 판매, 대치품
MTB50N06EL
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.
JAPAN: Nippon Motorola Ltd.; 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
4
*MTB50N06EL/D*Motorola TMOS Power MOSFET TransiMstToBr 5D0eNv0ic6eELD/Data

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MTB50N06EL

TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

Motorola Semiconductors
Motorola Semiconductors

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