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부품번호 | BTA10600B 기능 |
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기능 | BTA10-600B | ||
제조업체 | ETC | ||
로고 | |||
전체 6 페이지수
®
SNUBBERLESS™ & STANDARD
BTA/BTB10 Series
10A TRIACS
MAIN FEATURES:
www.DataSheet4U.com Symbol
IT(RMS)
VDRM/VRRM
IGT (Q1)
Value
10
600 and 800
25 to 50
Unit
A
V
mA
A2
G
A1
A2
DESCRIPTION
Available either in standard or snubberless
version, the BTA/BTB10 triac series is suitable for
general purpose AC switching. They can be used
as an ON/OFF function in applications such as
static relays, heating regulation, induction motor
starting circuits... or for phase control operation in
light dimmers, motor speed controllers, ...
The snubberless version (W suffix) is specially
recommended for use on inductive loads, thanks
to their high commutation performances.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500 V
RMS) complying with UL standards (File ref.:
E81734).
ABSOLUTE MAXIMUM RATINGS
A1
A2
G
TO-220AB Insulated
(BTA10)
A1
A2
G
TO-220AB
(BTB10)
Symbol
Parameter
IT(RMS) RMS on-state current
(full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
TO-220AB
Tc = 105°C
TO-220AB Ins.
F = 60 Hz
Tc = 95°C
t = 16.7 ms
F = 50 Hz
t = 20 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 10 ms
Tj = 25°C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 125°C
Tj = 125°C
April 2002 - Ed: 5A
Value
10
105
100
55
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
V
A
W
°C
1/6
BTA/BTB10 Series
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
Fig. 2: RMS on-state current versus case
temperature (full cycle).
P (W)
13
12
11
10
9
8
7
6
5
www.DataSheet4U.co4m
3
2
1 IT(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
IT(RMS) (A)
12
11
10
9
8
7
6
5
4
3
2
1
0
0 25
BTB
BTA
Tc(°C)
50 75
100 125
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
Fig. 4: On-state characteristics (maximum
values).
K=[Zth/Rth]
1E+0
Zth(j-c)
ITM (A)
100
Tj max.
Vto = 0.85 V
Rd = 40 mW
Tj max
1E-1
Zth(j-a)
10
Tj=25°C
1E-2
1E-3
1E-2
tp (s)
1E-1 1E+0 1E+1 1E+2 5E+2
VTM (V)
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A)
110
100
90
80
70
60
50
40 Repetitive
Tc=95°C
30
20
10
0
1
Non repetitive
Tj initial=25°C
Number of cycles
10 100
t=20ms
One cycle
1000
ITSM (A), I²t (A²s)
1000
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
I²t
10
0.01
tp (ms)
0.10 1.00
10.00
4/6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
다운로드 | [ BTA10600B.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
BTA10600B | BTA10-600B | ETC |
BTA10600C | 10A TRIACS | ST Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |