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Datasheet SPW47N60C2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SPW47N60C2 | Cool MOS Power Transistor Final data
SPW47N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 247
Product Summary VDS RDS(on) ID 600 0.07 47
P-TO247
V Ω A
• Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low e |  Infineon Technologies | transistor |
SPW Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SPW-TKP80E | Heaven Tsukatachi kitchen Sanyo data | | |
| 2 | SPW07N60CFD | Power-Transistor A?E'.=-'475
4VVS<>AB< # : A 0<& <,9=4=>: <
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# <: /?.>% ?8 8 , Infineon Technologies transistor | | |
| 3 | SPW11N60C2 | Cool MOS Power Transistor Final data
SPW11N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) ID 600 0.38 11
P-TO24 Infineon Technologies transistor | | |
| 4 | SPW11N60C3 | Cool MOS Power Transistor Final data
SPW11N60C3
VDS @ Tjmax RDS(on) ID 650 0.38 11
P-TO247
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance
V Ω A Infineon Technologies transistor | | |
| 5 | SPW11N60CFD | Cool MOS Power Transistor SPW11N60CFD Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax R Infineon Technologies transistor | | |
| 6 | SPW11N60S5 | Cool MOS Power Transistor SPW11N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
VDS RDS(on) ID
600 0.38 11
P-TO247
V Ω A
Type SPW11N60 Infineon Technologies transistor | | |
| 7 | SPW11N80C3 | Cool MOS Power Transistor CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitance Infineon Technologies transistor | |
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