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DG308B 데이터시트 PDF




Vishay Siliconix에서 제조한 전자 부품 DG308B은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 DG308B 기능
기능 (DG308B / DG309B) Improved Quad CMOS Analog Switches
제조업체 Vishay Siliconix
로고 Vishay Siliconix 로고


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DG308B 데이터시트, 핀배열, 회로
DG308B/309B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
D "22-V Supply Voltage Rating
D CMOS Compatible Logic
D Low On-Resistance—rDS(on): 45 W
D Low Leakage—ID(on): 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching—tON: < 200 ns
D Low Glitching—Q: 1 pC
BENEFITS
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Minimum Transients
D Reduced Power Consumption
D Superior to DG308A/309
D Space Savings (TSSOP)
APPLICATIONS
D Industrial Instrumentation
D Test Equipment
D Communications Systems
D Disk Drives
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
DESCRIPTION
The DG308B/309B analog switches are highly improved
versions of the industry-standard DG308A/309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design minimizes
switching transients. The DG308B and DG309B can handle
up to "22-V input signals. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is a
normally closed switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
V–
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
16 IN2
15 D2
14 S2
V+
13
NC
12
11 S3
10 D3
9 IN3
Top View
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
TRUTH TABLE
Logic
DG308B DG309B
0
OFF
ON
1 ON OFF
Logic “0” v 3.5V
Logic “1” w 11 V
ORDERING INFORMATION
Temp Range
Package
Part Number
–40 to 85_C
–55 to 125_C
16-Pin Plastic DIP
16-Pin Narrow SOIC
16-Pin TSSOP
16-Pin CerDIP
DG308BDJ
DG309BDJ
DG308BDY
DG309BDY
DG308BDQ
DG309BDQ
DG308BAK
DG308BAK/883
DG309BAK
DG309BAK/883
www.vishay.com S FaxBack 408-970-5600
4-1




DG308B pdf, 반도체, 판매, 대치품
DG308B/309B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110
100
90
"5 V
80
rDS(on) vs. VD and Temperature
100
V+ = 15 V
90 V– = –15 V
80
70
70 60 125_C
60
"10 V
50 85_C
50
"15 V
40 25_C
40 30 –55_C
"20 V
30 20
20 10
10
–20 –16 –12 –8 –4 0 4 8
VD – Drain Voltage (V)
12 16 20
0
–15
–10
–5 0
5
VD – Drain Voltage (V)
10
15
rDS(on) vs. VD and Single Power Supply Voltages
250
225 V+ = 5 V
200
175
150
7V
125
10 V
100 12 V
75 15 V
50
25
0
0 2 4 6 8 10 12 14 16
VD – Drain Voltage (V)
Leakage Currents vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
VS, VD = "14 V
Leakage Currents vs. Analog Voltage
40
30 V+ = 22 V
V– = –22 V
TA = 25_C
20
10
ID(on)
0 IS(off), ID(off)
–10
–20
–30
–40
–20 –15 –10 –5
0
5 10 15 20
Analog Voltage
QS, QD – Charge Injection vs. Analog Voltage
30
20
100 pA
10 pA
IS(off), ID(off)
10
V+ = 15 V
0 V– = –15 V
–10
–20
V+ = 12 V
V– = 0 V
1 pA
–55 –35 –15 5 25 45 65
Temperature (_C)
85 105 125
–30
–15
–10
–5 0
5
Analog Voltage (V)
10 15
www.vishay.com S FaxBack 408-970-5600
4-4
Document Number: 70047
S-52896—Rev. E, 14-Jul-97

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DG308B 전자부품, 판매, 대치품
APPLICATIONS
15 V
V+
+15 V
–15 V
LM101A
VIN +
5 MW
5.1 MW
V– DG309B
30 pF
–15 V
1 kW
50 pF
Aquisition Time
Aperature Time
Sample to Hold Offset
Droop Rate
= 25 ms
= 1 ms
= 5 mV
= 5 mV/s
FIGURE 7. Sample-and-Hold
DG308B/309B
Vishay Siliconix
Logic Input
Low = Sample
High = Hold
J202
+15 V
200 W
1000 pF
2N4400
J500
J507
VOUT
–15 V
fC4
Select
TTL
Control
fC3
Select
fC2
Select
fC1
Select
C4
150 pF
C3
1500 pF
C2
0.015 mF
C1
0.15 mF
+15 V
V1
V– DG309B GND
R1 = 10 kW
R2 = 10 kW
–15 V
R3 = 1 MW
+15 V
LM101A
–15 V
+
30 pF
VOUT
160
120
80
fC1
40
fC2 fC3 fC4
0 fL1 fL2 fL3 fL4
–40
1
10 100 1 k 10 k 100 k 1 M
Frequency – Hz
AL (Voltage Gain Below Break Frequency) =
1
fC (Break Frequency) = 2pR3CX
fL (Unity Gain Frequency) =
Max Attenuation =
rDS(on)
10 kW
1
2pR1CX
[ –40 dB
R3
R1 = 100 (40 dB)
Document Number: 70047
S-52896—Rev. E, 14-Jul-97
FIGURE 8. Active Low Pass Filter with Digitally Selected Break Frequency
www.vishay.com S FaxBack 408-970-5600
4-7

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