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PDF JAN2N5038 Data sheet ( Hoja de datos )
| Número de pieza | JAN2N5038 | |
| Descripción | (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices
2N5038
2N5039
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = +250C (1)
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Top, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 800 mW/0C for TC > +250C
2N5038 2N5039
90 75
150 125
7.0
5.0
20
140
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Max.
1.25
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5038
2N5039
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 25 mAdc
Collector-Base Cutoff Current
V(BR)EBO
VCE = 150 Vdc
2N5038
ICBO
VCE = 125 Vdc
Collector-Base Cutoff Current
2N5039
VCE = 70 Vdc
2N5038
ICEO
VCE = 55 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
2N5039
IEBO
VBE = -1.5 Vdc VCE = 100 Vdc
2N5038
ICEX
VBE = -1.5 Vdc VCE = 85 Vdc
2N5039
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
90
75
7.0
TO-3*
(TO-204AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
1.0 µAdc
1.0
1.0 µAdc
1.0
1.0 µAdc
5.0 µAdc
5.0
120101
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| JAN2N5038 | (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | Microsemi Corporation |
| JAN2N5039 | (JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR | Microsemi Corporation |
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