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IRLZ44Z 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRLZ44Z은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


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부품번호 IRLZ44Z 기능
기능 AUTOMOTIVE MOSFET
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로고 International Rectifier 로고


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IRLZ44Z 데이터시트, 핀배열, 회로
PD - 95849
AUTOMOTIVE MOSFET
Features
Logic Level
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
IRLZ44Z
IRLZ44ZS
IRLZ44ZL
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 13.5m
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety
of other applications.
TO-220AB
IRLZ44Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
iMounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
kRθJC
Junction-to-Case
ikRθCS
Case-to-Sink, Flat Greased Surface
ikRθJA Junction-to-Ambient
jkRθJA Junction-to-Ambient (PCB Mount)
ID = 51A
S
D2Pak
IRLZ44ZS
TO-262
IRLZ44ZL
Max.
51
36
204
80
0.53
± 16
78
110
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.87
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
www.irf.com
1
3/2/04




IRLZ44Z pdf, 반도체, 판매, 대치품
IRLZ44Z/S/L
2500
2000
1500
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 31A
10
8
VDS= 44V
VDS= 28V
VDS= 11V
6
4
2
0
0 10 20 30 40
QG Total Gate Charge (nC)
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
1.0
TJ = 25°C
0.1
0.2
VGS = 0V
0.6 1.0 1.4
VSD, Source-to-Drain Voltage (V)
1.8
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRLZ44Z 전자부품, 판매, 대치품
IRLZ44Z/S/L
1000
Duty Cycle = Single Pulse
100
0.01
10
0.05
0.10
1
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 15. Typical Avalanche Current Vs.Pulsewidth
1.0E-01
100
80
60
40
20
0
25
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 31A
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Fig 16. Maximum Avalanche Energy
Vs. Temperature
www.irf.com
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
7

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