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부품번호 | DE375-501N21A 기능 |
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기능 | RF Power MOSFET | ||
제조업체 | IXYS Corporation | ||
로고 | |||
전체 4 페이지수
DE375-501N21A
RF Power MOSFET
♦ N-Channel Enhancement Mode
♦ Low Qg and Rg
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
Symbol Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Maximum Ratings
500 V
500 V
VDSS = 500 V
ID25 = 25 A
RDS(on) = 0.22 Ω
PDC = 940 W
VGS
VGSM
Continuous
Transient
±20 V
±30 V
ID25 Tc = 25°C
IDM Tc = 25°C, pulse width limited by TJM
25 A
150 A
IAR
EAR
dv/dt
PDC
PDHS
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Tc = 25°C
Derate 3.7W/°C above 25°C
21 A
30 mJ
5 V/ns
>200 V/ns
940 W
425
GATE
W
DRAIN
PDAMB
Tc = 25°C
4.5 W
RthJC
RthJHS
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
0.16 C/W
0.36 C/W
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ. max.
VGS = 0 V, ID = 3 ma
500
V
VDS = VGS, ID = 4 ma
2.5 5.5 V
VGS = ±20 VDC, VDS = 0
±100 nA
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
50 µA
1 mA
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.22 Ω
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
gfs VDS = 15 V, ID = 0.5ID25, pulse test
17 S Advantages
TJ
-55
+175 °C
• Optimized for RF and high speed
switching at frequencies to 50MHz
TJM
175
°C • Easy to mount—no insulators needed
Tstg
-55
+175 °C
• High power density
TL 1.6mm (0.063 in) from case for 10 s
300 °C
Weight
3g
DE375-501N21A
RF Power MOSFET
501N21A DE-SERIES SPICE Model (Preliminary)
The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expan-
sion of the SPICE level 3 MOSFET model. It includes the stray inductive terms
LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term.
The output capacitance, COSS, and reverse transfer capacitance, CRSS are mod-
eled with reversed biased diodes. This provides a varactor type response neces-
sary for a high power device model. The turn on delay and the turn off delay are
adjusted via Ron and Roff.
Figure 1 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the DEI web site at
www.directedenergy.com/spice.htm
Net List:
.SUBCKT 501N21A 10 20 30
* TERMINALS: D G S
* 500 Volt 21 Amp 0.22 ohm N-Channel Power MOSFET
* REV.A 01-09-02
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 0.3
DON 6 2 D1
ROF 5 7 .1
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.6N
RD 4 1 0.22
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .5N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M)
.MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0250 Rev 4
© 2003 IXYS RF
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: [email protected]
Web: http://www.directedenergy.com
4페이지 | |||
구 성 | 총 4 페이지수 | ||
다운로드 | [ DE375-501N21A.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DE375-501N21A | RF Power MOSFET | IXYS Corporation |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |