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PDF AOB414 Data sheet ( Hoja de datos )
| Número de pieza | AOB414 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | ETC | |
| Logotipo |  |
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Rev 2: Nov. 2004
AOB414, AOB414L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB414 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity
and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core
power conversion. AOB414L ( Green Product ) is
offered in a lead-free package.
Features
VDS (V) = 30V
ID = 110A
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 4.8mΩ (VGS = 4.5V)
TO-263
D2-PAK
D
Top View
Drain Connected
to Tab
G
S
GD S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current B,G
TC=25°C G
TC=100°C B
ID
Pulsed Drain Current
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
110
80
200
30
140
100
50
3.1
2
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
8.1
33
0.84
Max
12
40
1.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1 page  
AOB414, AOB414L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 120
TA=25°C
100 100
80 80
60
40
tA
=
L⋅ ID
BV − VDD
60
40
20 20
0
0.00001
0.0001
0.001
0.01
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
120
100
80
60
40
20
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 14: Current De-rating (Note B)
175
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOB414.PDF ] | |
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