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Número de pieza | ISL9R460PF2 | |
Descripción | 4A / 600V Stealth Diode | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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ISL9R460PF2
4A, 600V Stealth™ Diode
General Description
The ISL9R460PF2 is a Stealth™ diode optimized for low
loss performance in high frequency hard switched
applications. The Stealth™ family exhibits low reverse
recovery current (IRRM) and exceptionally soft recovery
under typical operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRRM and short ta phase reduce loss
in switching transistors. The soft recovery minimizes
ringing, expanding the range of conditions under which the
diode may be operated without the use of additional
snubber circuitry. Consider using the Stealth™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
Formerly developmental type TA49408.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 20ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
TO-220F
Symbol
K
CATHODE
ANODE
A
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
PD
EAVL
TJ, TSTG
TL
TPKG
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (TC = 108°C)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (0.5A, 80mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
600
600
600
4
8
50
22
10
-55 to 150
300
260
V
V
V
A
A
A
W
mJ
°C
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A
1 page Test Circuit and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
VGE
t1
t2
L
DUT CURRENT
RG SENSE
+
MOSFET
VDD
-
IF
0
dIF
dt
trr
ta tb
0.25 IRM
IRM
Figure 12. Itrr Test Circuit
I = 0.5A
L = 80mH
R < 0.1Ω
VDD = 200V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
DUT
R
+
VDD
VDD
-
Figure 14. Avalanche Energy Test Circuit
Figure 13. trr Waveforms and Definitions
VAVL
IL
IV
IL
t0 t1 t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
©2003 Fairchild Semiconductor Corporation
ISL9R460PF2 Rev. A
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet ISL9R460PF2.PDF ] |
Número de pieza | Descripción | Fabricantes |
ISL9R460PF2 | 4A / 600V Stealth Diode | Fairchild Semiconductor |
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