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IKW25T120 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 IKW25T120은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 IKW25T120 기능
기능 IGBT ( Insulated Gate Bipolar Transistor )
제조업체 Infineon Technologies
로고 Infineon Technologies 로고


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IKW25T120 데이터시트, 핀배열, 회로
TrenchStop® Series
IKW25T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP314D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW25T120 1200V 25A
1.7V
150C K25T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
50
25
75
75
50
25
75
20
10
190
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.3 12.06.2013




IKW25T120 pdf, 반도체, 판매, 대치품
TrenchStop® Series
IKW25T120
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=25A
VGE=15V
VGE=15V,tSC10s
VCC = 600V,
Tj = 25C
-
-
-
-
-
-
1860
96
82
155
13
150
- pF
-
-
- nC
- nH
-A
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=25A
VGE=0/15V,
RG=22,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=25A,
diF/dt=800A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
50
30
560
70
2.0
2.2
4.2
200
2.3
21
390
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
µC
A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
4
Rev. 2.3 12.06.2013

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IKW25T120 전자부품, 판매, 대치품
TrenchStop® Series
IKW25T120
70A
60A
VGE=17V
50A 15V
13V
40A 11V
9V
30A
7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
70A
60A
VGE=17V
50A 15V
13V
40A 11V
9V
30A
7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
70A
60A
50A
40A
30A
20A
10A TJ=150°C
25°C
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=50A
2,0V
1,5V
1,0V
IC=25A
IC=15A
IC=8A
0,5V
0,0V
-50°C
0°C
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
7
Rev. 2.3 12.06.2013

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부품번호상세설명 및 기능제조사
IKW25T120

IGBT ( Insulated Gate Bipolar Transistor )

Infineon Technologies
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