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PDF MW6S010 Data sheet ( Hoja de datos )
| Número de pieza | MW6S010 | |
| Descripción | RF Power Field Effect Transistor | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
•
Typical Two - Tone Performance
125 mA,
Power
PGoauitn=—101W8 daBtts
PEP
@
960
MHz,
VDD
=
28
Volts,
IDQ
=
Drain Efficiency — 32%
IMD — - 37 dBc
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• N Suffix Indicates Lead - Free Terminations
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Document Number: MW6S010
Rev. 1, 5/2005
MW6S010NR1
MW6S010GNR1
MW6S010MR1
MW6S010GMR1
450 - 1500 MHz, 10 W, 28 V
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MW6S010NR1(MR1)
CASE 1265A - 02, STYLE 1
TO - 270 - 2 GULL
PLASTIC
MW6S010GNR1(GMR1)
Table 1. Maximum Ratings
Rating
Symbol
Value
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ TC = 25°C
Derate above 25°C
VDSS
VGS
PD
- 0.5, +68
- 0.5, +12
61.4
0.35
Storage Temperature Range
Operating Junction Temperature
Table 2. Thermal Characteristics
Tstg - 65 to +175
TJ 200
Characteristic
Symbol
Value (1.2)
Thermal Resistance, Junction to Case
Case Temperature 80°C, 10 W PEP
RθJC
2.85
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Unit
Vdc
Vdc
W
W/°C
°C
°C
Unit
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
1
1 page  
TYPICAL CHARACTERISTICS — 900 MHz
48 ηD
44
40 IRL
36
32
VDD = 28 Vdc, Pout = 10 W (Avg.)
IDQ = 125 mA, 100 kHz Tone Spacing
28
24 IMD
20 Gps
16
−8
− 10
− 12
− 14
− 16
− 18
− 20
− 22
− 24
− 26
910 920 930 940 950 960 970
f, FREQUENCY (MHz)
Figure 3. Two - Tone Wideband Performance
@ Pout = 10 Watts
20
IDQ = 190 mA
19
125 mA
18 90 mA
17
16 VDD = 28 Vdc, f = 945 MHz
Two −Tone Measurements
100 kHz Tone Spacing
15
0.1 1
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 4. Two - Tone Power Gain versus
Output Power
100
− 10
VDD = 28 Vdc, IDQ = 125 mA
f = 945 MHz, Two −Tone Measurements
−20 100 kHz Tone Spacing
− 30
3rd Order
5th Order
− 40
7th Order
− 50
− 60
− 70
0.1 1 10 100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Intermodulation Distortion Products
versus Output Power
− 15
VDD = 28 Vdc, Pout = 10 W (Avg.)
−20 IDQ = 125 mA, Two −Tone Measurements
Center Frequency = 945 MHz
− 25
− 30
−35 3rd Order
− 40
−45 5th Order
−50 7th Order
− 55
0.1 1 10 100
TWO −TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
48
46 P3dB = 43.14 dBm (20.61 W)
Ideal
44 P1dB = 42.23 dBm (16.71 W)
42
Actual
40 VDD = 28 Vdc, IDQ = 125 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 945 MHz
38
19 21 23 25 27 29
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
5
5 Page 
TYPICAL CHARACTERISTICS — 450 MHz
20.4 37
20.2 Gps
20
34
31
19.8 ηD
19.6
19.4
19.2
19
18.8
18.6 ALT1
VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ACPR
IRL
28
25
−40 −6
−45 −9
−50 −12
−55 −15
−60 −18
18.4 −65
400 410 420 430 440 450 460 470 480 490 500
− 21
f, FREQUENCY (MHz)
Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg.
19 55
18.8 Gps 50
18.5
ηD
18.3
18
17.8
17.5
17.3
17
VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
ACPR
IRL
45
40
35
− 30
− 35
− 40
− 45
16.8 ALT1
− 50
16.5 −55
400 410 420 430 440 450 460 470 480 490 500
−4
−6
−8
− 10
− 12
− 14
f, FREQUENCY (MHz)
Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg.
30 0
25
S11
20
S21
15
−5
− 10
− 15
10 VDD = 28 Vdc
Pout = 10 W
IDQ = 150 mA
− 20
5 −25
50 100 150 200 250 300 350 400 450 500 550 600 650
f, FREQUENCY (MHz)
Figure 18. Broadband Frequency Response
VDD = 28 Vdc, IDQ = 150 mA,
f = 450 MHz, N−CDMA IS−95 Pilot,
Sync, Paging, Traffic Codes 8
Through 13
− 10
− 20
− 30
ACPR
− 40
ALT1 −50
ALT2 −60
− 70
− 80
0.1 1 10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 19. Single - Carrier N - CDMA ACPR, ALT1
and ALT2 versus Output Power
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1 MW6S010MR1 MW6S010GMR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MW6S010.PDF ] | |
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