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2SK3418 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 2SK3418
기능 Silicon N Channel MOS FET
제조업체 Hitachi Semiconductor
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2SK3418 데이터시트, 핀배열, 회로
2SK3418
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 4.3 m typ.
4 V gate drive device
High speed switching
Outline
TO-220AB
D
G
S
ADE-208-941 (Z)
1st. Edition
Mar. 2001
1
2
3
1. Gate
2. Drain (Flange)
3. Source




2SK3418 pdf, 반도체, 판매, 대치품
2SK3418
Main Characteristics
Power vs. Temperature Derating
160
120
80
40
0 50 100 150 200
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
300 10 µs
100
30
10
3 Operation in
PDWC(=OT1cp0e=rma2ts5io°(nC11 )smhso1t0) 0 µs
this area is
1 limited by RDS(on)
0.3
0.1 Ta = 25°C
0.1 0.3 1 3 10
Drain to Source Voltage
30 100
VDS (V)
Typical Output Characteristics
100
VGS = 10 V
Pulse Test
5V
80
4V
60
40
3V
20
2.5 V
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
100
V DS = 10 V
Pulse Test
80
60
40
25°C
20
75°C
Tc = –25°C
0 1 23 45
Gate to Source Voltage VGS (V)
4

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2SK3418 전자부품, 판매, 대치품
Reverse Drain Current vs.
Source to Drain Voltage
100
10 V
80
5V
60
VGS = 0, –5 V
40
20
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSDF (V)
2SK3418
Maximum Avalanche Energy vs.
Channel Temperature Derating
400
I AP = 60 A
320 V DD = 15 V
duty < 0.1 %
Rg > 50
240
160
80
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
• L • I AP2
VDSS
VDSS – V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
7

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