|
|
PDF SSM3K14T Data sheet ( Hoja de datos )
| Número de pieza | SSM3K14T | |
| Descripción | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSM3K14T (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SSM3K14T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
SSM3K14T
DC-DC Converter
High Speed Switching Applications
Unit: mm
· Small Package
· Low ON-resistance: Ron = 39 mΩ (max) (@VGS = 10 V)
: Ron = 57 mΩ (max) (@VGS = 4.5 V)
· High speed: ton = 24 ns (typ.)
: toff = 19 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDS
VGSS
ID
IDP (Note 2)
PD (Note 1)
t = 10 s
Tch
Tstg
30
±20
4.0
8.0
0.7
1.25
150
-55~150
Note 1: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 645 mm2)
Note 2: The pulse width limited by max channel temperature.
Unit
V
V
A
W
°C
°C
Marking
3
Equivalent Circuit
3
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 10 mg (typ.)
KDK
12
12
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the
environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and
containers and other objects that come into direct contact with devices should be made of anti-static materials.
The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to
the board material, board area, board thickness and pad area, and are also affected by the environment in
which the product is used. When using this device, please take heat dissipation fully into account.
1 2002-01-24
1 page  
SSM3K14T
Safe operating area
10
ID max (pulsed)
ID max (continuous)
1 ms*
10 ms*
1
DC operation
Ta = 25°C
10 s*
0.1
Mounted on FR4 board
(C2u5.p4amd:m64´52m5.m42m) m ´ 1.6 t,
*: Single nonrepetitive Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1 1
VDSS max
10
Drain-Source voltage VDS (V)
100
1000
rth – tw
1.5
t = 10 s
1.25
PD – Ta
Mounted on FR4 board
(C2u5.p4amd:m64´52m5.m42m) m ´ 1.6 t,
1
0.75 DC
0.5
0.25
0
0 25 50 75 100 125 150
Ambient temperature Ta (°C)
100
10
1
0.001
0.01
Single pulse
Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t,
Cu pad: 645 mm2)
0.1 1 10 100 1000
Pulse width tw (s)
5 2002-01-24
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM3K14T.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSM3K14T | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |