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부품번호 | EMF9 기능 |
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기능 | Power management (dual transistors) | ||
제조업체 | ROHM Semiconductor | ||
로고 | |||
전체 5 페이지수
Transistors
EMF9
Power management (dual transistors)
EMF9
2SC5585 and 2SK3019 are housed independently in a EMT6 package.
!Application
Power management circuit
!External dimensions (Units : mm)
!Features
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
!Structure
Silicon epitaxial planar transistor
!Equivalent circuits
(3) (2) (1)
(4) (3)
(5) (2)
(6) (1)
1.2
1.6
ROHM : EMT6
Each lead has
same dimensions
Abbreviated symbol : F9
Tr1
Tr2
(4) (5) (6)
!Packaging specifications
Type
Package
Marking
Code
Basic ordering unit (pieces)
EMF9
EMT6
F9
T2R
8000
1/5
Transistors
Tr2
200m
VDS=3V
100m Pulsed
50m
20m
10m
5m
2m
1m
0.5m
0.2m
0.1m
0
Ta=125°C
75°C
25°C
−25°C
123
GATE-SOURCE VOLTAGE : VGS (V)
4
Fig.9 Typical transfer characteristics
2 VDS=3V
ID=0.1mA
Pulsed
1.5
1
0.5
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.10 Gate threshold voltage vs.
channel temperature
EMF9
50
20 Ta=125°C
75°C
25°C
10 −25°C
5
VGS=4V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.11 Static drain-source on-state
resistance vs. drain current ( Ι )
50
Ta=125°C
20
75°C
25°C
−25°C
10
5
VGS=2.5V
Pulsed
2
1
0.5
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.12 Static drain-source on-state
resistance vs. drain current ( ΙΙ )
15 Ta=25°C
Pulsed
10
5
ID=0.1A
ID=0.05A
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.13 Static drain-source on-state
resistance vs. gate-source
voltage
9 VGS=4V
8 Pulsed
7
ID=100mA
6
5 ID=50mA
4
3
2
1
0
−50 −25 0 25 50 75 100 125 150
CHANNEL TEMPERATURE : Tch (°C)
Fig.14 Static drain-source on-state
resistance vs. channel
temperature
0.5
0.2
Ta=−25°C
0.1 25°C
0.05
75°C
125°C
0.02
0.01
0.005
VDS=3V
Pulsed
0.002
0.001
0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2
DRAIN CURRENT : ID (A)
0.5
Fig.15 Forward transfer admittance vs.
drain current
200m
100m
50m
VGS=0V
Pulsed
20m
Ta=125°C
10m 75°C
5m 25°C
−25°C
2m
1m
0.5m
0.2m
0.1m
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.16 Reverse drain current vs.
source-drain voltage ( Ι )
200m
Ta=25°C
100m Pulsed
50m
20m
10m VGS=4V
5m
0V
2m
1m
0.5m
0.2m
0.1m
0 0.5 1 1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.17 Reverse drain current vs.
source-drain voltage ( ΙΙ )
4/5
4페이지 | |||
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |