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IRFZ44N 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 IRFZ44N은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 IRFZ44N 자료 제공

부품번호 IRFZ44N 기능
기능 55V, 49A, HEXFET Power MOSFET
제조업체 International Rectifier
로고 International Rectifier 로고


IRFZ44N 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




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IRFZ44N 데이터시트, 핀배열, 회로
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
www.irf.com
PD - 94053
IRFZ44N
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 17.5m
ID = 49A
S
TO-220AB
Max.
49
35
160
94
0.63
± 20
25
9.4
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Typ.
–––
0.50
–––
Max.
1.5
–––
62
Units
°C/W
1
01/03/01




IRFZ44N pdf, 반도체, 판매, 대치품
IRFZ44N
2500
2000
1500
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
500
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 25A
16
12
VDS = 44V
VDS = 27V
VDS = 11V
8
4
0
0 10 20 30 40 50 60 70
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
TJ = 175° C
10
1 TJ = 25° C
0.1
0.0
VGS = 0 V
0.6 1.2 1.8
VSD ,Source-to-Drain Voltage (V)
2.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com

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IRFZ44N 전자부품, 판매, 대치품
IRFZ44N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+ Circuit Layout Considerations
Low Stray Inductance
ƒ
Ground Plane
Low Leakage Inductance
Current Transformer
-
„
-+

RG
VGS
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
- VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
[VDD]
[ISD]
www.irf.com
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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