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부품번호 | IRFZ46NL 기능 |
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기능 | (IRFZ46NL / IRFZ46NS) HEXFET POWER MOSFET | ||
제조업체 | International Rectifier | ||
로고 | |||
전체 10 페이지수
l Advanced Process Technology
l Surface Mount (IRFZ46NS)
l Low-profile through-hole (IRFZ46NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
G
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46NL) is available for low-
profile applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
www.irf.com
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91305C
IRFZ46NS
IRFZ46NL
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.0165Ω
ID = 53A
S
D 2 Pak
TO-262
Max.
53
37
180
3.8
107
0.71
± 20
28
11
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Typ.
Max.
1.4
40
Units
°C/W
1
04/08/04
IRFZ46NS/IRFZ46NL
2800
2400
2000
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1600
1200
Coss
800
Crss
400
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 28A
16
VDS = 44V
VDS = 28V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0A
0 10 20 30 40 50 60
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
TJ = 175°C
TJ = 25°C
10
1 VGS = 0V A
0.4 0.8 1.2 1.6 2.0 2.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100 10µs
100µs
10 1ms
TC = 25°C
TJ = 175°C
Single Pulse
1
10ms
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
www.irf.com
4페이지 IRFZ46NS/IRFZ46NL
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
RG
+ Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
+
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- VDD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
VGS=10V *
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
www.irf.com
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
VDD
ISD
7
7페이지 | |||
구 성 | 총 10 페이지수 | ||
다운로드 | [ IRFZ46NL.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
IRFZ46N | Power MOSFET ( Transistor ) | International Rectifier |
IRFZ46NL | (IRFZ46NL / IRFZ46NS) HEXFET POWER MOSFET | International Rectifier |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |