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PDF T435-xxx Data sheet ( Hoja de datos )
| Número de pieza | T435-xxx | |
| Descripción | 4A TRIACS | |
| Fabricantes | ST Microelectronics | |
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®
SNUBBERLESS™ & LOGIC LEVEL
T4 Series
4A TRIACS
MAIN FEATURES:
Symbol
IT(RMS)
VDRM/VRRM
IGTT (Q1)
Value
4
600 to 800
5 to 35
Unit
A
V
mA
DESCRIPTION
Based on ST’s Snubberless / Logic level technolo-
gy providing high commutation performances, the
T4 series is suitable for use on AC inductive loads.
They are recommended for applications using
universal motors, electrovalves.... such as kitchen
aid equipments, power tools, dishwashers,...
Available in a fully insulated package, the
T4...-...W version complies with UL standards (ref.
E81734).
A2
G
A1
A2
A2
A1 A2
G
DPAK
(T4-B)
A1
A2
G
IPAK
(T4-H)
A2
A1
A2
G
TO-220AB
(T4-T)
A1
A2
G
ISOWATT 220AB
(T4-W)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
IT(RMS)
ITSM
I²t
dI/dt
IGM
PG(AV)
Tstg
Tj
RMS on-state current (full sine wave)
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
I²t Value for fusing
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
DPAK / IPAK
TO-220AB
Tc = 110°C
ISOWATT 220AB Tc = 105°C
F = 50 Hz
F = 60 Hz
t = 20 ms
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 125°C
tp = 20 µs
Tj = 125°C
Tj = 125°C
Value
4
30
31
5.1
50
4
1
- 40 to + 150
- 40 to + 125
Unit
A
A
A²s
A/µs
A
W
°C
June 2003 - Ed: 5
1/8
1 page  
T4 Series
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
500
100
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
Fig. 7: On-state characteristics (maximum
values).
ITM(A)
30.0
10.0
Tj=Tj max.
10
1
0.01
tp (ms)
0.10
1.00
I²t
10.00
1.0
VTM(V)
Tj max.:
Vto= 0.90 V
Rd= 120 mΩ
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
T405
(dV/dt)c (V/µs)
1.0 10.0
T435
T410
100.0
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
Tj(°C)
0
0 25 50 75
100 125
Fig. 10: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35µm).
Rth(j-a) (°C/W)
100
90
DPAK
80
70
60
50
40
30
20
10 S(cm²)
0
0 4 8 12 16 20 24 28 32 36 40
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet T435-xxx.PDF ] | |
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