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PDF IRL2703S Data sheet ( Hoja de datos )
| Número de pieza | IRL2703S | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 9.1360
PRELIMINARY
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
G
IRL2703S
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 0.04Ω
S ID = 24A
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D 2Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Max.
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
300 (1.6mm from case)
Min.
––––
––––
Typ.
––––
––––
Max.
3.3
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/18/96
1 page  
24
20
16
12
8
4
0A
25 50 75 100 125 150 175
TC , Case Temperature (°C )
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRL2703S
VDS
VGS
RG
RD
D.U.T.
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0 .5 0
1
0.2 0
0 .1 0
0.05
0.02
0.0 1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
t1
t2
N o tes :
1. Duty factor D = t1 / t 2
2 . P e a k TJ = P D M x Z th J C + T C
0.001
0.01
t1 , Re cta n g u la r P u lse D u ra tio n (se c)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRL2703S.PDF ] | |
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