|
|
PDF IRL2203NL Data sheet ( Hoja de datos )
| Número de pieza | IRL2203NL | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRL2203NL (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
PD - 94394
IRL2203NS
IRL2203NL
HEXFET® Power MOSFET
D
VDSS = 30V
RDS(on) = 7.0mΩ
G
ID = 116A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D2Pak
is suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRL2203NL) is available for low-profile applications.
D2Pak
IRL2203NS
TO-262
IRL2203NL
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
116
82
400
3.8
180
1.2
± 16
60
18
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient(PCB Mounted,steady-state)
Typ.
–––
–––
Max.
0.85
40
Units
°C/W
www.irf.com
1
02/18/02
1 page  
IRL2203NS/IRL2203NL
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1
D = 0.50
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.20
0.1 0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRL2203NL.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRL2203N | Power MOSFET ( Transistor ) | International Rectifier |
| IRL2203NL | Power MOSFET ( Transistor ) | International Rectifier |
| IRL2203NL | Power MOSFET ( Transistor ) |  FreesCale |
| IRL2203NLPbF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |