(PDF) HAT2168H Datasheet - Silicon N Channel Power MOS FET Power Switching

Número de pieza	HAT2168H
Descripción	Silicon N Channel Power MOS FET Power Switching
Fabricantes	Renesas Technology
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No Preview Available ! HAT2168H Silicon N Channel Power MOS FET Power Switching Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6.0 mΩ typ. (at VGS = 10 V) Outline LFPAK 5 D 4 G SSS 12 3 5 1 234 1, 2, 3 Source 4 Gate 5 Drain REJ03G0046-0600Z Rev.6.00 Jun.02.2003 Rev.6.00, Jun.02.2003, page 1 of 10 1 page HAT2168H Drain to Source Saturation Voltage vs. Gate to Source Voltage 250 Pulse Test 200 150 I D = 20 A 100 10 A 50 5A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 10 VGS = 4.5 V 5 10 V 2 1 1 0.3 10 3 100 30 1000 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 I D = 20 A 12 V GS = 4.5 V 8 4 10 V 10 A, 5A 5 A, 10 A, 20 A 0 -25 0 25 50 75 100 125 150 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 100 30 Tc = -25°C 10 25°C 3 75°C 1 0.3 0.1 0.1 V DS = 10 V Pulse Test 0.3 1 3 10 30 100 Drain Current I D (A) Rev.6.00, Jun.02.2003, page 5 of 10 5 Page

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PDF Descargar	[ Datasheet HAT2168H.PDF ]

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PDF HAT2168H Data sheet ( Hoja de datos )